CAJ | 학술논문

利用常压MOCVD法在Si及Al2O3衬底上制备了TiO2薄膜．研究了沉积温度和退火温度对TiO2薄膜结构和形貌的影响，以及TiO2薄膜的光学性质．研究发现，沉积温度为600℃时，制备的TiO2薄膜结构为锐钛矿相，薄膜质量较高．TiO2薄膜在1090℃高温退火后，薄膜结构完全转变为金红相．TiO2薄膜在可见区域有着高达90％以上透射率，在紫外区域有着强烈的吸收．
이용상압MOCVD법재Si급Al2O3츤저상제비료TiO2박막．연구료침적온도화퇴화온도대TiO2박막결구화형모적영향，이급TiO2박막적광학성질．연구발현，침적온도위600℃시，제비적TiO2박막결구위예태광상，박막질량교고．TiO2박막재1090℃고온퇴화후，박막결구완전전변위금홍상．TiO2박막재가견구역유착고체90％이상투사솔，재자외구역유착강렬적흡수．
The TiO2 film is fabricated on Si and A12 03 substrates by atmospheric pressure metal organic chemical vapor deposition （AP-MOCVD）. The effects of grown temperature and anneal temperature on the crystal structure and morphology of TiO2 film are researched and the optical quality of TiO2 film is also investigated. The researches show that anatase TiOz film is fabricated at 600℃ with a higher quality. After a high anneal temperature （ 1 090℃ ） , the anatase TiO2 film is turned to rutile TiO2 film. The TiO2 film has a high of more than 90 % transmittance in the visible region and has a strong absorption in the ultraviolet region.