CAJ | 학술논문

主要针对三维集成封装中的关键技术之一的硅通孔互连技术进行电性能研究。首先简要介绍了硅通孔互连技术的背景，利用三维全波电磁仿真软件建立地．信号一地TSV模型，对其TDR阻抗和时域TDR／TDT信号进行分析，同时仿真分析了TSV互连线及介质基板所使用的材料和TSV半径、高度、绝缘层厚度等物理尺寸对三维封装中TSV信号传输性能的影响。研究结果可为工程设计提供有力的技术参考，有效地用于改善互连网络的S21，提高三维集成电路系统的性能。
주요침대삼유집성봉장중적관건기술지일적규통공호련기술진행전성능연구。수선간요개소료규통공호련기술적배경，이용삼유전파전자방진연건건입지．신호일지TSV모형，대기TDR조항화시역TDR／TDT신호진행분석，동시방진분석료TSV호련선급개질기판소사용적재료화TSV반경、고도、절연층후도등물리척촌대삼유봉장중TSV신호전수성능적영향。연구결과가위공정설계제공유력적기술삼고，유효지용우개선호련망락적S21，제고삼유집성전로계통적성능。
The electrical characteristics of through silicon vias （TSVs） interconnect technology, which e- merged as one of the key technologies in 3 D integration package, are analyzed. Brief background of TSV technology is given. Then, a 2-tier ground-signal-ground TSV （GSG-TSV） is investigated in time domain and frequency domain using 3D full wave field solver. And the TDR impedance is shown as well as TDR/ TDT signals. At last, the impact of physical configurations and materials on TSV electrical performance is evaluated and analyzed in details. From these preliminary results, S21 in a network could be improved and the performance of 3D circuits and systems would be enhanced.