CAJ | 학술논문

　　采用溶胶-凝胶工艺在Pt/TiO2/Si衬底上制备Bi3.75Ce0.25Ti3O12电致阻变薄膜，研究退火温度对Bi3.75Ce0.25Ti3O12薄膜结构和介电、阻变特性的影响，分析了薄膜在低阻态和高阻态时的电流传导机理。结果表明，所制备Bi3.75Ce0.25Ti3O12薄膜具有单一的钙钛矿晶格结构，不同退火温度Bi3.75Ce0.25Ti3O12薄膜的低、高阻态电流比ILRS/IHRS在104~106，在600℃时有2.5 V的最低Vset电压。无论是高阻态还是低阻态，Bi3.75Ce0.25Ti3O12薄膜的介电常数都随退火温度的升高而增大，介电损耗则随退火温度的升高而减小，高阻态大于低阻态时的介电常数和介电损耗。在低阻态和高阻态的低压区以欧姆传导为主，在高阻态的高压区以空间电荷限制电流（SCLC）传导为主。
　　채용용효-응효공예재Pt/TiO2/Si츤저상제비Bi3.75Ce0.25Ti3O12전치조변박막，연구퇴화온도대Bi3.75Ce0.25Ti3O12박막결구화개전、조변특성적영향，분석료박막재저조태화고조태시적전류전도궤리。결과표명，소제비Bi3.75Ce0.25Ti3O12박막구유단일적개태광정격결구，불동퇴화온도Bi3.75Ce0.25Ti3O12박막적저、고조태전류비ILRS/IHRS재104~106，재600℃시유2.5 V적최저Vset전압。무론시고조태환시저조태，Bi3.75Ce0.25Ti3O12박막적개전상수도수퇴화온도적승고이증대，개전손모칙수퇴화온도적승고이감소，고조태대우저조태시적개전상수화개전손모。재저조태화고조태적저압구이구모전도위주，재고조태적고압구이공간전하한제전류（SCLC）전도위주。
Bi3.75Ce0.25Ti3O12 thin films were prepared on Pt/TiO2/Si substrates by sol ? gel method. The structure and resistive switching characteristics and dielectric properties of Bi3.75Ce0.25Ti3O12 thin films annealed at various temperatures were studied. The thin films show that a perovskite phase,and clear current ratio of different resistance with 104<ILRS/IHRS<106 are observed at different temperatures. The lowest operation voltage(2.5 V)appears at 600 ℃. In the high resistance state(HRS)or the low resistance state(LRS),the dielectric constant rises with increasing temperatures,and dielectric loss decreases. Both dielectric constant and dielectric loss of HRS are higher than those of LRS. It is also found that the conduction mechanisms of LRS and low voltage section of HRS are dominated by Ohmic behavior,and Space ? Charge ? Limited ? Current (SCLC) conduction is predominent in the high voltage section of HRS.