CAJ | 학술논문

　　通过高温固相合成Sr0.955Al2Si2-xGexO8∶Eu2+（x =0~1.0）系列试样荧光粉，系统研究Ge4+置换Si4+对其晶体结构和光谱特性的影响。Ge4+以类质同相替代SrAl2Si2O8晶格中的Si4+形成连续固溶体，晶胞参数a，b，c，β和晶胞体积V随Ge4+置换量的增加呈线性递增。荧光激发谱为宽带，位于230~400 nm，可拟合成4个峰，表观峰值位于351 nm处；随着Ge4+置换量的增加，半高宽从105 nm减小到95 nm。发射光谱位于380~600 nm，可由406 nm和441 nm两个峰拟合而成，表观峰值位于407 nm处；随着Ge4+置换Si4+进入基质晶格，造成Eu—O距离变小，使Eu2+所处的晶体场强度增强，发光中心Eu2+的5d能级分裂增大，造成Eu2+最低发射能级重心下移，两拟合谱峰峰位均呈线性红移。
　　통과고온고상합성Sr0.955Al2Si2-xGexO8∶Eu2+（x =0~1.0）계렬시양형광분，계통연구Ge4+치환Si4+대기정체결구화광보특성적영향。Ge4+이류질동상체대SrAl2Si2O8정격중적Si4+형성련속고용체，정포삼수a，b，c，β화정포체적V수Ge4+치환량적증가정선성체증。형광격발보위관대，위우230~400 nm，가의합성4개봉，표관봉치위우351 nm처；수착Ge4+치환량적증가，반고관종105 nm감소도95 nm。발사광보위우380~600 nm，가유406 nm화441 nm량개봉의합이성，표관봉치위우407 nm처；수착Ge4+치환Si4+진입기질정격，조성Eu—O거리변소，사Eu2+소처적정체장강도증강，발광중심Eu2+적5d능급분렬증대，조성Eu2+최저발사능급중심하이，량의합보봉봉위균정선성홍이。
A series of phosphors Sr0.955Al2Si2-xGexO8∶Eu2 +(x=0-1.0)were prepared by high temperature solid?state reaction. The effects of Ge4 +substitution for Si4 + on the host lattice and spectral properties were investigated. The results show that complete solid solutions are formed while Ge4+ enters SrAl2Si2O8 lattice and substitutes Si4+. The lattice parameters(a,b,c,β)and unit cell volume increase linearly as Ge4 + content increases in the phosphors. A broad excitation spectrum consists of four excitation bands,which locate between 230 nm and 400 nm,the maximum emission wavelength of which is at 351 nm. The FWHM of the apparent excitation peak narrows from 105 nm to 95 nm. The emission spectrum,which is also a broad band between 380 nm and 600 nm,can be fitted by two peaks at 406 nm and 441 nm and its apparent peak is at 407 nm. The distance of Eu and O becomes shortened due to Si4+ is replaced by Ge4+. The crystal field of the emitting center Eu2+ location is enhanced,the splitting of 5d orbital levels is increased and the lowest emission level is expanded to lower,two fitted peaks are red shifted in a linear way.