电子质量
電子質量
전자질량
ELECTRONICS QUALITY
2012年
7期
65-67
,共3页
静电放电%RuO2%厚膜电阻%阻值变化率
靜電放電%RuO2%厚膜電阻%阻值變化率
정전방전%RuO2%후막전조%조치변화솔
electrostatic discharge(ESD)%RuO2%thick film resistor%resistance variation
采用静电放电(Electrostatic discharge,ESD)发生器对RuO2厚膜电阻直接放电,研究了电阻阻值变化率与电阻尺寸、阻值和ESD条件的关系。结果表明:厚膜电阻阻值受ESD作用而下降;相同ESD及阻值条件下的阻值变化率随电阻尺寸的增大而减小;相同电阻的阻值变化率随ESD电压的增大而增大;10kΩ左右的厚膜电阻在ESD作用下的阻值变化率最大,阻值变化率随着阻值的减小和增大而呈减小趋势;对10kΩ厚膜电阻反复施加不断增大的ESD电压,除宽度尺寸为0.45mm的电阻阻值在8~10kV之间出现一次回升外,电阻阻值逐步下降。
採用靜電放電(Electrostatic discharge,ESD)髮生器對RuO2厚膜電阻直接放電,研究瞭電阻阻值變化率與電阻呎吋、阻值和ESD條件的關繫。結果錶明:厚膜電阻阻值受ESD作用而下降;相同ESD及阻值條件下的阻值變化率隨電阻呎吋的增大而減小;相同電阻的阻值變化率隨ESD電壓的增大而增大;10kΩ左右的厚膜電阻在ESD作用下的阻值變化率最大,阻值變化率隨著阻值的減小和增大而呈減小趨勢;對10kΩ厚膜電阻反複施加不斷增大的ESD電壓,除寬度呎吋為0.45mm的電阻阻值在8~10kV之間齣現一次迴升外,電阻阻值逐步下降。
채용정전방전(Electrostatic discharge,ESD)발생기대RuO2후막전조직접방전,연구료전조조치변화솔여전조척촌、조치화ESD조건적관계。결과표명:후막전조조치수ESD작용이하강;상동ESD급조치조건하적조치변화솔수전조척촌적증대이감소;상동전조적조치변화솔수ESD전압적증대이증대;10kΩ좌우적후막전조재ESD작용하적조치변화솔최대,조치변화솔수착조치적감소화증대이정감소추세;대10kΩ후막전조반복시가불단증대적ESD전압,제관도척촌위0.45mm적전조조치재8~10kV지간출현일차회승외,전조조치축보하강。
Using electrostatic discharge( ESD ) generator directly discharge on RuO~ thick film resistor,the relations between resistance variation of resistor and resistive size,resistance value and ESD condition were investigated.The results show that the resistance value decreased under the effects of ESD;the resistance variation decreased as the size of the resistor is larger under the same ESD condition and the same resistance value;the resistance variation of the same resistor increased as the ESD voltage is increasing;the resistance variation of thick film resistor with more or less 10kΩ resistance value under the effects of ESD is the largest,and the resistance variation trended to decrease as the resistance value of the resistor is smaller or larger than 10kΩ .By applying repeated and increasing ESD voltage on the thick film resistor with the resistance value of 10kΩ,the resistance value decreased step by step,except the resistance value of the resistor with 0.45mm resistive width was picked up for once while with the ESD voltage from 8kV to 10kV.