电子科技
電子科技
전자과기
IT AGE
2012年
8期
86-89
,共4页
单壁碳纳米管%随机网络%场效应晶体管%荫罩式电子束蒸发%底栅
單壁碳納米管%隨機網絡%場效應晶體管%蔭罩式電子束蒸髮%底柵
단벽탄납미관%수궤망락%장효응정체관%음조식전자속증발%저책
SWCNTs%random networks%field effect transistor%shadow mask electron beam evaporation%bot-tom-gate
利用电子柬蒸发技术在Si衬底形成Au电极作为底栅电极，在底栅电极上生长SiO2薄膜。超声分散CVD法合成的商用单壁碳纳米管（SWCNTs），使用匀胶机将单壁碳纳米管悬浮液均匀旋涂于SiO2薄膜上。再利用荫罩式电子束蒸发技术，在单壁碳纳米管随机网络薄膜表面制备漏源电极。该工艺过程避免了碳纳米管过多的化学接触，有效地保护了碳纳米管的性状。在室温条件下对器件电学性能进行测试和分析。使用该方法制备的单壁碳纳米管随机网络薄膜场效应晶体管，具有器件性能稳定、重复性和一致性较好等优点，并可用于构建碳纳米管逻辑电路。该方法对于研究基于碳纳米管的大规模、低成本的集成电路，具有较高的借鉴价值。
利用電子柬蒸髮技術在Si襯底形成Au電極作為底柵電極，在底柵電極上生長SiO2薄膜。超聲分散CVD法閤成的商用單壁碳納米管（SWCNTs），使用勻膠機將單壁碳納米管懸浮液均勻鏇塗于SiO2薄膜上。再利用蔭罩式電子束蒸髮技術，在單壁碳納米管隨機網絡薄膜錶麵製備漏源電極。該工藝過程避免瞭碳納米管過多的化學接觸，有效地保護瞭碳納米管的性狀。在室溫條件下對器件電學性能進行測試和分析。使用該方法製備的單壁碳納米管隨機網絡薄膜場效應晶體管，具有器件性能穩定、重複性和一緻性較好等優點，併可用于構建碳納米管邏輯電路。該方法對于研究基于碳納米管的大規模、低成本的集成電路，具有較高的藉鑒價值。
이용전자간증발기술재Si츤저형성Au전겁작위저책전겁，재저책전겁상생장SiO2박막。초성분산CVD법합성적상용단벽탄납미관（SWCNTs），사용균효궤장단벽탄납미관현부액균균선도우SiO2박막상。재이용음조식전자속증발기술，재단벽탄납미관수궤망락박막표면제비루원전겁。해공예과정피면료탄납미관과다적화학접촉，유효지보호료탄납미관적성상。재실온조건하대기건전학성능진행측시화분석。사용해방법제비적단벽탄납미관수궤망락박막장효응정체관，구유기건성능은정、중복성화일치성교호등우점，병가용우구건탄납미관라집전로。해방법대우연구기우탄납미관적대규모、저성본적집성전로，구유교고적차감개치。
The bottom-gate electrode is deposited on the Si substrate with electron beam evaporation method. Thin film of SiO2 is grown on the bottom-gate electrode. The suspending liquid with single-walled carbon nanotubes （SWCNTs） which are fabricated by the commercial SWCNTs with ultra-sonic and dispersion procedures was spin- coated on the thin film of SiO2. The drain-source electrodes were formed on the thin films of the SWCNTs by shadow mask electron beam evaporation. Too much chemistry contact with the SWCNTs is avoided by using this technology, and the properties of the SWCNTs are preserved effectively. The electricity performance of the CNT-FET device is tested at room temperature. The SWCNTs random networks thin film FETs had the advantages of steady performance, good repeatability and uniformity. This technique can be used for constructing logic circuits in CNTs, and provide valuable references for making research on large-scale and low-cost ICs based on CNTs.
