电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2014年
2期
45-48
,共4页
高玉竹%洪伟%龚秀英%吴广会%冯彦斌
高玉竹%洪偉%龔秀英%吳廣會%馮彥斌
고옥죽%홍위%공수영%오엄회%풍언빈
非制冷红外光子探测器%InAsSb%峰值探测率%光谱响应
非製冷紅外光子探測器%InAsSb%峰值探測率%光譜響應
비제랭홍외광자탐측기%InAsSb%봉치탐측솔%광보향응
uncooled IR photodetector%InAsSb%peak detectivity%spectral photoresponse
工作在中、长波红外波段(波长5~12μm)的红外探测器在红外制导、红外成像、环境监测及资源探测等方面有着重要而广阔的应用前景。目前中国军用和民用对这一波段的非制冷型、快速响应的光子型红外探测器有迫切需求。文中用熔体外延(ME)法在InAs(砷化铟)衬底上生长的InAs0.05Sb0.95(铟砷锑)厚膜单晶,制作了高灵敏度、非制冷型、中长波光导型探测器,探测器上安装了Ge(锗)浸没透镜。傅里叶变换红外(FTIR)吸收光谱显示InAsSb材料的本征吸收边出现在波长8μm以后。InAs0.05Sb0.95探测器的光谱响应波长范围为2~9μm。室温下,在波长6.5μm处的峰值探测率Dλp*达到5.4×109 cm·Hz1/2·W-1,在波长8.0μm和9.0μm处的探测率D*分别为9.3×108和1.3×108 cm·Hz1/2·W-1,显示了InAsSb探测器的优越性能及对红外探测和成像的应用前景。
工作在中、長波紅外波段(波長5~12μm)的紅外探測器在紅外製導、紅外成像、環境鑑測及資源探測等方麵有著重要而廣闊的應用前景。目前中國軍用和民用對這一波段的非製冷型、快速響應的光子型紅外探測器有迫切需求。文中用鎔體外延(ME)法在InAs(砷化銦)襯底上生長的InAs0.05Sb0.95(銦砷銻)厚膜單晶,製作瞭高靈敏度、非製冷型、中長波光導型探測器,探測器上安裝瞭Ge(鍺)浸沒透鏡。傅裏葉變換紅外(FTIR)吸收光譜顯示InAsSb材料的本徵吸收邊齣現在波長8μm以後。InAs0.05Sb0.95探測器的光譜響應波長範圍為2~9μm。室溫下,在波長6.5μm處的峰值探測率Dλp*達到5.4×109 cm·Hz1/2·W-1,在波長8.0μm和9.0μm處的探測率D*分彆為9.3×108和1.3×108 cm·Hz1/2·W-1,顯示瞭InAsSb探測器的優越性能及對紅外探測和成像的應用前景。
공작재중、장파홍외파단(파장5~12μm)적홍외탐측기재홍외제도、홍외성상、배경감측급자원탐측등방면유착중요이엄활적응용전경。목전중국군용화민용대저일파단적비제랭형、쾌속향응적광자형홍외탐측기유박절수구。문중용용체외연(ME)법재InAs(신화인)츤저상생장적InAs0.05Sb0.95(인신제)후막단정,제작료고령민도、비제랭형、중장파광도형탐측기,탐측기상안장료Ge(타)침몰투경。부리협변환홍외(FTIR)흡수광보현시InAsSb재료적본정흡수변출현재파장8μm이후。InAs0.05Sb0.95탐측기적광보향응파장범위위2~9μm。실온하,재파장6.5μm처적봉치탐측솔Dλp*체도5.4×109 cm·Hz1/2·W-1,재파장8.0μm화9.0μm처적탐측솔D*분별위9.3×108화1.3×108 cm·Hz1/2·W-1,현시료InAsSb탐측기적우월성능급대홍외탐측화성상적응용전경。
Infrared (IR) detectors operating in mid and long-wave infrared (5~12μm wavelength region) have important and wide applications for IR guide and imaging, environmental monitoring and natural resource detection. Currently, uncooled infrared photodetectors with fast responding velocity operating in this waveband are in urgent demand for military and civil use in China. High sensitivity uncooled mid and long-wave IR InAsSb photoconductors were experimentally validated in this paper. The photoconductors were fabricated using InAs0.05Sb0.95 thick epilayers grown on InAs substrates by melt epitaxy (ME) method. Ge optical immersion lenses were set on the photoconductors. Fourier transform infrared (FTIR) absorption spectra showed that the intrinsic absorption edges of InAsSb materials appear beyond the wavelength of 8μm. The photoresponse wavelength range of InAs0.05Sb0.95 detectors was 2~9 μm. At room temperature, the peak detectivity Dλp* reached 5.4×109 cm·Hz1/2·W-1 at the wavelength of 6.5 μm for the immersed detectors. The detectivity D*was 9.3×108 and 1.3×108 cm·Hz1/2·W-1 at the wavelength of 8 and 9 μm respectively, indicating the excellent performance of InAsSb photoconductors and possible applications for infrared (IR) detection and imaging.