CAJ | 학술논문

传统射频LDMOS晶体管的源区采用重掺杂p+sinker结构，该结构会占据较大的芯片面积。文中采用槽型sinker结构，可将源区sinker面积减少1/3以上。通过流片实验，得到饱和电流为170 mA/mm、击穿电压120 V、截止频率和最大振荡频率分别为5.5 GHz和10 GHz的RF LDMOS器件。在50 V工作电压、1090 MHz频点下栅宽345 mm单芯片器件的最大输出功率362 W，功率增益15.6 dB，漏极效率38.1%。
전통사빈LDMOS정체관적원구채용중참잡p+sinker결구，해결구회점거교대적심편면적。문중채용조형sinker결구，가장원구sinker면적감소1/3이상。통과류편실험，득도포화전류위170 mA/mm、격천전압120 V、절지빈솔화최대진탕빈솔분별위5.5 GHz화10 GHz적RF LDMOS기건。재50 V공작전압、1090 MHz빈점하책관345 mm단심편기건적최대수출공솔362 W，공솔증익15.6 dB，루겁효솔38.1%。
In conventional RF LDMOS structure the source region is formed by high dose p+sinker, which much of the chip area would be consumed by. In this paper, we use trench type sinker structure can reduce the sinker area more than one-third. By tapeout experiment, a RF LDMOS device with 170 mA/mm Saturation current, 120 V breakdown voltage, 5.5 GHz cut-off frequency and 10 GHz max oscillator frequency was achieved;The single device of 345 mm poly width working at 50 V voltage and 1 090 MHz frequency can provide 362 W peak power with 15.6 dB power gain and 38.1%drain efficiency.