CAJ | 학술논문

IGS电离层V T EC产品对电离层相关研究具有重要应用价值，其全球用户呈不断快速增长趋势。由于缺乏较详细的内插算法介绍，结合IO N EX1．0格式说明文件和瑞士BERN大学源代码对内插算法进行了解析，并以2013年5月16日产品为例说明了四种内插算法的差异，为准确使用IGS电离层V T EC产品提供了参考。
IGS전리층V T EC산품대전리층상관연구구유중요응용개치，기전구용호정불단쾌속증장추세。유우결핍교상세적내삽산법개소，결합IO N EX1．0격식설명문건화서사BERN대학원대마대내삽산법진행료해석，병이2013년5월16일산품위례설명료사충내삽산법적차이，위준학사용IGS전리층V T EC산품제공료삼고。
It’s valuable for relative studies of IGS ionosphere VTEC product ,which has a rapid increasing tendency for global using .Because of insufficiencies of introductions to in-terpolating algorithms , the analysis is done based IONEX1 .0format specifications and BERN source codes .The differences of four interpolating algorithms are demonstrated for 2012-05-16 products including VTEC and its RMS .This paper will be helpful to using IGS i-onosphere VTEC product correctly .