现代电子技术
現代電子技術
현대전자기술
MODERN ELECTRONICS TECHNIQUE
2014年
6期
98-100
,共3页
陈定平%李方华%李明%朱爱兵%张锐
陳定平%李方華%李明%硃愛兵%張銳
진정평%리방화%리명%주애병%장예
半导体生产%金属刻蚀%干法去硅渣%湿法去硅渣
半導體生產%金屬刻蝕%榦法去硅渣%濕法去硅渣
반도체생산%금속각식%간법거규사%습법거규사
semiconductor manufacturing%metal etch%si residues removal%Si residue dry removal method%Si residue wet removal method
半导体器件制造中会用到ALSI或ALSICU做金属连线，ALSI或ALSICU里一般含有0.5%~1%的Si，目的是防止ALSI互融造成PN junction spiking，但引入Si、金属连线刻蚀后会有硅渣析出，刻开区分布不规则的小黑点，影响表观。比较和分析了目前半导体制造行业几种去硅渣方式的机理和优缺点，同时提出一种新的高效的干法去硅渣方式。在上述分析的基础上，标准化了去硅渣工艺，提出的去硅渣标准流程，对半导体制造具有广泛的指导作用。
半導體器件製造中會用到ALSI或ALSICU做金屬連線，ALSI或ALSICU裏一般含有0.5%~1%的Si，目的是防止ALSI互融造成PN junction spiking，但引入Si、金屬連線刻蝕後會有硅渣析齣，刻開區分佈不規則的小黑點，影響錶觀。比較和分析瞭目前半導體製造行業幾種去硅渣方式的機理和優缺點，同時提齣一種新的高效的榦法去硅渣方式。在上述分析的基礎上，標準化瞭去硅渣工藝，提齣的去硅渣標準流程，對半導體製造具有廣汎的指導作用。
반도체기건제조중회용도ALSI혹ALSICU주금속련선，ALSI혹ALSICU리일반함유0.5%~1%적Si，목적시방지ALSI호융조성PN junction spiking，단인입Si、금속련선각식후회유규사석출，각개구분포불규칙적소흑점，영향표관。비교화분석료목전반도체제조행업궤충거규사방식적궤리화우결점，동시제출일충신적고효적간법거규사방식。재상술분석적기출상，표준화료거규사공예，제출적거규사표준류정，대반도체제조구유엄범적지도작용。
ALSI or ALSICU may be used as metal connecting line in semiconductor manufacturing. About 0.5%~1% Si is put in ALSI or ALSICU to prevent ALSI penetration into P-N junction to produce junction spiking. In order to remove the Si resi-dues on wafer’s surface,the mechanisms and relative merits of Si residues removal methods used in semiconductor manufac-turing industry at present are compared and analyzed,and a new Si residue dry removal method is proposed in this paper. The standardized Si residue removal process was laid down. The standard procedure presented in this paper for removing the Si resi-due has an extensive guiding function in semiconductor manufacturing industry.
