西安工业大学学报
西安工業大學學報
서안공업대학학보
JOURNAL OF XI'AN TECHNOLOGICAL UNIVERSITY
2013年
12期
952-956
,共5页
直流磁过滤%电弧源%银膜%靶电流
直流磁過濾%電弧源%銀膜%靶電流
직류자과려%전호원%은막%파전류
magnetic filter%arc ion plating%silver film%target current
为了探索电弧离子镀技术制备银薄膜中相关的工艺参数,利用直流磁过滤电弧源在K9玻璃和硅片上制备了银膜,通过白光干涉仪和剥离实验对所制备银膜的厚度、表面粗糙度和附着力进行检测,分析靶电流、基片偏压和过渡层对银薄膜沉积速率、粗糙度及附着力等特性的影响.实验结果表明:当靶电流为90.0 A 时,沉积速率为1.84 nm/s ,在偏压为+10 V时,得到膜层粗糙度为0.5355 nm ;利用过渡层的辅助,通过电弧离子镀有效地提高了银膜的附着力.
為瞭探索電弧離子鍍技術製備銀薄膜中相關的工藝參數,利用直流磁過濾電弧源在K9玻璃和硅片上製備瞭銀膜,通過白光榦涉儀和剝離實驗對所製備銀膜的厚度、錶麵粗糙度和附著力進行檢測,分析靶電流、基片偏壓和過渡層對銀薄膜沉積速率、粗糙度及附著力等特性的影響.實驗結果錶明:噹靶電流為90.0 A 時,沉積速率為1.84 nm/s ,在偏壓為+10 V時,得到膜層粗糙度為0.5355 nm ;利用過渡層的輔助,通過電弧離子鍍有效地提高瞭銀膜的附著力.
위료탐색전호리자도기술제비은박막중상관적공예삼수,이용직류자과려전호원재K9파리화규편상제비료은막,통과백광간섭의화박리실험대소제비은막적후도、표면조조도화부착력진행검측,분석파전류、기편편압화과도층대은박막침적속솔、조조도급부착력등특성적영향.실험결과표명:당파전류위90.0 A 시,침적속솔위1.84 nm/s ,재편압위+10 V시,득도막층조조도위0.5355 nm ;이용과도층적보조,통과전호리자도유효지제고료은막적부착력.
In order to explore the influence of parameters of Ag film ,deposited by magnetic filtration arc ion plating (M FAIP) ,such as the Ag target current ,the bias of substrate and the usage of transition layer ,to the thickness ,roughness ,adhesion of Ag film ,Ag films were deposited on K9 glass and silicon substrate ,and tested by white-light interferometer and stripping test respectively .Experimental results showed that the deposition rate of Ag films was 1 .84 nm/s with the target current fixed at 90 A ,and a minimum value of 0 .535 5 nm of the surface roughness was got at a bias of + 10 V . With the introduction of the transition layer ,the adhesion of the Ag film deposited by M FAIP was obviously improved .