CAJ | 학술논문

为了合理地设计光学系统以整形大功率激光二极管阵列（High Diode Laser Stack）出射光束，必须准确了解HDLS的远场分布，然而对于HDLS远场分布的研究还不多。从亥姆霍兹方程出发，以激光二极管（Diode Laser）远场分布特性为基础，提出了一种新的半导体激光器阵列的远场分布模型，通过计算机仿真给出了简化DLS 模型的远场光场变化图；模型还可表示不对称的双峰结构，有一定的现实意义。
위료합리지설계광학계통이정형대공솔격광이겁관진렬（High Diode Laser Stack）출사광속，필수준학료해HDLS적원장분포，연이대우HDLS원장분포적연구환불다。종해모곽자방정출발，이격광이겁관（Diode Laser）원장분포특성위기출，제출료일충신적반도체격광기진렬적원장분포모형，통과계산궤방진급출료간화DLS 모형적원장광장변화도；모형환가표시불대칭적쌍봉결구，유일정적현실의의。
In order to design optical system to collimate laser beam,its far-field distribution should be acquired exact-ly.Based on Helmholtz equation and far-field distribution characteristic of DL(diode laser),a new far-field expression model of DLS(diode laser stack)is proposed.The changing graph of far-field intensity distribution of the simplified DLS is given by simulation. The model has some practical significance because it can express asymmetrical double-peak structure.