CAJ | 학술논문

通过开路电位-时间曲线、极化曲线和恒电位电流密度暂态曲线研究痕量 Ga 及退火工艺对高压阳极铝箔电化学性能的影响，在此基础上，结合光学显微镜和扫描电镜研究痕量 Ga 对阳极铝箔腐蚀发孔性能的影响。结果表明，退火工艺可以改变Al-44×10-6 Ga在含氯离子溶液中的电化学活性。提高退火温度(200～600℃)可促使Al-44×10-6 Ga的点蚀电位负移，500℃退火、保温1 h后，延长退火保温时间(4～12 h)，点蚀电位变动很小；相对无Ga高纯铝，Ga含量为44×10-6的高纯铝在中性NaCl溶液中的开路电位向负电位方向移动约0.1～0.15 V、点蚀电位负移约0.11 V，并能在更负的电位下发生活性溶解；进而使相应的含Ga铝箔的腐蚀区面积比显著提高至96.5%，且蚀孔密度、分布均匀性提高，即痕量Ga改善了阳极铝箔在环保型盐酸-硫酸体系中的腐蚀发孔性能。
통과개로전위-시간곡선、겁화곡선화항전위전류밀도잠태곡선연구흔량 Ga 급퇴화공예대고압양겁려박전화학성능적영향，재차기출상，결합광학현미경화소묘전경연구흔량 Ga 대양겁려박부식발공성능적영향。결과표명，퇴화공예가이개변Al-44×10-6 Ga재함록리자용액중적전화학활성。제고퇴화온도(200～600℃)가촉사Al-44×10-6 Ga적점식전위부이，500℃퇴화、보온1 h후，연장퇴화보온시간(4～12 h)，점식전위변동흔소；상대무Ga고순려，Ga함량위44×10-6적고순려재중성NaCl용액중적개로전위향부전위방향이동약0.1～0.15 V、점식전위부이약0.11 V，병능재경부적전위하발생활성용해；진이사상응적함Ga려박적부식구면적비현저제고지96.5%，차식공밀도、분포균균성제고，즉흔량Ga개선료양겁려박재배보형염산-류산체계중적부식발공성능。
The effect of trace Ga on the electrochemical behavior of high purity aluminum was characterized using open circuit potential-time curve, potentiodynamic polarization curve and potentiostatic current density transient curve. The effect of trace Ga on the pitting performance of anode aluminum foil was investigated by optical microscopy and scanning electron microscopy. The research indicates that, annealing process can change the electrochemical activity of Al-44×10-6 Ga in the solution containing chloride ion, increasing annealing temperature (200~600℃) can prompt the negative shift of pitting potential of Al-44×10-6 Ga, while the pitting potential changes a little with prolonging of the holding time(4~12 h)at 500℃. In naturally 3.5%NaCl solution, the open circuit potential of the high purity aluminum containing 44×10-6 Ga is 0.1~0.15 V lower than that of Ga-free high purity aluminum, and the pitting potential shifts negatively by about 0.11 V. The ratio of corrosion area of the Ga-contained foil is highly increases to 96.5%, and uniformity of pits also increases, indicating trace Ga can improve the pitting performance of anode aluminum foil in environmental friendly HCl-H2SO4 corrosion system.