CAJ | 학술논문

采用DevEdit3D构建了5×5的像元结构模型，在基于Lnuminous1μm的近红外的照射下，利用SilvacoTCAD仿真了像元中心距、阱深、衬底掺杂浓度等工艺参数对其电荷收集量和像元串扰程度的影响。仿真测得电荷收集量随像元中心距和阱深的增大而增大，随衬底掺杂浓度的增大而减小；像元间串扰程度与像元中心距的大小以及阱深的深度成反比，与衬底掺杂浓度的大小成正比。最后对以上影响的成因进行了理论分析。
채용DevEdit3D구건료5×5적상원결구모형，재기우Lnuminous1μm적근홍외적조사하，이용SilvacoTCAD방진료상원중심거、정심、츤저참잡농도등공예삼수대기전하수집량화상원천우정도적영향。방진측득전하수집량수상원중심거화정심적증대이증대，수츤저참잡농도적증대이감소；상원간천우정도여상원중심거적대소이급정심적심도성반비，여츤저참잡농도적대소성정비。최후대이상영향적성인진행료이론분석。
The 5 ×5 CMOS array is designed with Devedit 3D.Based on the near-infrared (1μm)from Lnuminous,theeffect of center distance,substrate doping and N-well depth on the crosstalk and collected charges is simulated withSilvaco TCAD.The simulation shows that the collected charges increase with the increase of center distance and N-well depth,and it decreases with the increase of substrate doping.The crosstalk is inversely proportional to center dis-tance and the well depth,and it is proportional to the substrate doping concentration.Finally the causes of the aboveeffects are theoretically analyzed.