CAJ | 학술논문

采用室温磁控溅射的方法在玻璃衬底上沉积掺 Ti 氧化铟薄膜,并在真空中采用 XeCl 准分子激光进行退火,样品的光学、电学性能、相结构分别采用分光光度计、霍尔效应测试仪和 X 射线衍射仪进行测试。结果表明,功率为100~150mJ/cm2的准分子激光照射可以使薄膜由无定形态转变为结晶态,激活所掺杂的Ti原子,降低薄膜的电阻率；增大退火功率还可以进一步降低载流子浓度,提高薄膜的透过率。经150mJ/cm2准分子激光退火的掺Ti氧化铟薄膜,其电阻率为6.93×10-4Ω·cm,透过率达到了88.4%。
채용실온자공천사적방법재파리츤저상침적참 Ti 양화인박막,병재진공중채용 XeCl 준분자격광진행퇴화,양품적광학、전학성능、상결구분별채용분광광도계、곽이효응측시의화 X 사선연사의진행측시。결과표명,공솔위100~150mJ/cm2적준분자격광조사가이사박막유무정형태전변위결정태,격활소참잡적Ti원자,강저박막적전조솔；증대퇴화공솔환가이진일보강저재류자농도,제고박막적투과솔。경150mJ/cm2준분자격광퇴화적참Ti양화인박막,기전조솔위6.93×10-4Ω·cm,투과솔체도료88.4%。
ITiO film was deposited by the methods of room temperature magnetron sputtering and annealed by the XeCl excimer laser in vacuum.The optic,electronic characteristics and phase structure were tested by spec-trophotometer,hall-effect testing instrument and X-ray diffractometer respectively.The result show that,irra-diation by excimer laser with power of 100-150mJ/cm2 can convert the thin film from the amorphous state to a polymorphic state,activate the doped Ti atoms,and decrease the resistivity of the film.In addition,improve the laser power can reduce the carrier concentration and make the transmittance increase.By the excimer laser annealing of 150mJ/cm2,the resistivity of the ITiO film was 6.93×10-4Ω·cm,and transmittance can reach 88.4%.