苏州科技学院学报:自然科学版
囌州科技學院學報:自然科學版
소주과기학원학보:자연과학판
Journal of University of Science and Technology of Suzhou
2012年
3期
41-45
,共5页
祖丰硕%王滩%石岩%朱峰%丁澜%张浩%董洁雯%马锡英
祖豐碩%王灘%石巖%硃峰%丁瀾%張浩%董潔雯%馬錫英
조봉석%왕탄%석암%주봉%정란%장호%동길문%마석영
石墨烯%化学气相沉积%光、电特性%电子迁移率%光透过率
石墨烯%化學氣相沉積%光、電特性%電子遷移率%光透過率
석묵희%화학기상침적%광、전특성%전자천이솔%광투과솔
grapheme%chemical vapor deposition%optoelectronic properties%electronic mobility%optical transmittance
利用化学气相沉积方法制备了石墨烯薄膜,并研究了其光电特性。以乙醇做反应原料、氩气作为携载气体,在873 K、973 K、1 073 K的温度下合成石墨烯薄膜。应用光学显微镜观察,发现在1 073 K时能够制备大面积均匀、平整光滑的石墨烯薄膜。纳曼光谱分析结果表明:制备的石墨烯薄膜出现2 650 cm^-1的石墨烯的特征峰-D强峰,同时该峰强度随温度的升高而迅速增强,说明低温不能使沉积的碳原子有效的石墨化为石墨烯,而较高的温度有助于乙醇分解并石墨化为石墨烯薄膜。在1 073 K时沉积的石墨烯薄膜具有良好的光、电特性,其电子迁移率可以达到104 cm^2.(V·s)^-1,光透射率达97%,因此,可用于制备石墨烯晶体管、太阳能电池等光电子器件。
利用化學氣相沉積方法製備瞭石墨烯薄膜,併研究瞭其光電特性。以乙醇做反應原料、氬氣作為攜載氣體,在873 K、973 K、1 073 K的溫度下閤成石墨烯薄膜。應用光學顯微鏡觀察,髮現在1 073 K時能夠製備大麵積均勻、平整光滑的石墨烯薄膜。納曼光譜分析結果錶明:製備的石墨烯薄膜齣現2 650 cm^-1的石墨烯的特徵峰-D彊峰,同時該峰彊度隨溫度的升高而迅速增彊,說明低溫不能使沉積的碳原子有效的石墨化為石墨烯,而較高的溫度有助于乙醇分解併石墨化為石墨烯薄膜。在1 073 K時沉積的石墨烯薄膜具有良好的光、電特性,其電子遷移率可以達到104 cm^2.(V·s)^-1,光透射率達97%,因此,可用于製備石墨烯晶體管、太暘能電池等光電子器件。
이용화학기상침적방법제비료석묵희박막,병연구료기광전특성。이을순주반응원료、아기작위휴재기체,재873 K、973 K、1 073 K적온도하합성석묵희박막。응용광학현미경관찰,발현재1 073 K시능구제비대면적균균、평정광활적석묵희박막。납만광보분석결과표명:제비적석묵희박막출현2 650 cm^-1적석묵희적특정봉-D강봉,동시해봉강도수온도적승고이신속증강,설명저온불능사침적적탄원자유효적석묵화위석묵희,이교고적온도유조우을순분해병석묵화위석묵희박막。재1 073 K시침적적석묵희박막구유량호적광、전특성,기전자천이솔가이체도104 cm^2.(V·s)^-1,광투사솔체97%,인차,가용우제비석묵희정체관、태양능전지등광전자기건。
We have fabricated grapheme thin films with chemical vapor deposition and studied their optoelectronic properties. The films were synthesized using ethanol as reactive material, and Ar gas as the carrying gas at 873 K, 973 K,and 1073 K temperatures. Through the optical microscopy,we have found that the grapheme film with large area,flat,smooth and uniform is deposited at 1 073 K. Additionally,the results of Raman spectrum analysis show that the samples have a strong, sharp characteristic peak -D peak at 2 650 cm-t. At the same time, the intensity of the D-peak is enhanced quickly with the deposition temperature increasing. This indicates that low temperature can not graphitize the deposited carbon atoms while high temperature can effectively decompose ethanol and graphitize carbon atoms to form graphene. Moreover, the graphene thin film deposited at 1 073 K is characteristics of high optoelectronic properties. The mobility of carriers is up to 104 cm^2- (V·s)^-1and the optical transmittance is over 97%. Therefore,the graphene thin film can be used to make grapheme transistor and sun energy battery.