装甲兵工程学院学报
裝甲兵工程學院學報
장갑병공정학원학보
JOURNAL OF ARMORED FORCE ENGINEERING INSTITUTE
2012年
4期
78-82
,共5页
杨臻%底月兰%张平%李奇%侯玉涛
楊臻%底月蘭%張平%李奇%侯玉濤
양진%저월란%장평%리기%후옥도
低温离子渗硫%相结构%X射线光电子能谱%俄歇电子能谱仪
低溫離子滲硫%相結構%X射線光電子能譜%俄歇電子能譜儀
저온리자삼류%상결구%X사선광전자능보%아헐전자능보의
low-temperature ion sulfurizing%phase structure%X-ray photo electron spectrometry%Augerelectron spectroscopy
采用扫锚电子显微镜(Scanning Electron Microscope,SEM)对CrN/MoS,固体自润滑复合膜表面形貌进行了观察,利用X射线光电子能谱(X-ray Photoelectron Spectroscopy,XPS)和俄歇电子能谱仪(Auger Electron Spectrosco-PY,AES)对复合膜渗硫层的相结构及剖面元素分布进行了研究。结果表明:经低温离子渗硫处理后,在复合涂层中成功合成MoS,自润滑相,并伴有少量SO2、CrSO4生成。研究发现:渗硫层被氧化是源于渗硫过程中残留的氧气和样品保存过程中接触的空气;用真空封装等隔氧保存方式可防止样品存储过程中渗硫层被氧化;改善渗硫工艺,杜绝渗硫过程中渗硫层被氧化,可以获得单一成分的MoS2层。
採用掃錨電子顯微鏡(Scanning Electron Microscope,SEM)對CrN/MoS,固體自潤滑複閤膜錶麵形貌進行瞭觀察,利用X射線光電子能譜(X-ray Photoelectron Spectroscopy,XPS)和俄歇電子能譜儀(Auger Electron Spectrosco-PY,AES)對複閤膜滲硫層的相結構及剖麵元素分佈進行瞭研究。結果錶明:經低溫離子滲硫處理後,在複閤塗層中成功閤成MoS,自潤滑相,併伴有少量SO2、CrSO4生成。研究髮現:滲硫層被氧化是源于滲硫過程中殘留的氧氣和樣品保存過程中接觸的空氣;用真空封裝等隔氧保存方式可防止樣品存儲過程中滲硫層被氧化;改善滲硫工藝,杜絕滲硫過程中滲硫層被氧化,可以穫得單一成分的MoS2層。
채용소묘전자현미경(Scanning Electron Microscope,SEM)대CrN/MoS,고체자윤활복합막표면형모진행료관찰,이용X사선광전자능보(X-ray Photoelectron Spectroscopy,XPS)화아헐전자능보의(Auger Electron Spectrosco-PY,AES)대복합막삼류층적상결구급부면원소분포진행료연구。결과표명:경저온리자삼류처리후,재복합도층중성공합성MoS,자윤활상,병반유소량SO2、CrSO4생성。연구발현:삼류층피양화시원우삼류과정중잔류적양기화양품보존과정중접촉적공기;용진공봉장등격양보존방식가방지양품존저과정중삼류층피양화;개선삼류공예,두절삼류과정중삼류층피양화,가이획득단일성분적MoS2층。
The SEM (Scanning Electron Microscope) is utilized to observe and analyze the microstructure of CrN/MoS2 solid self-lubricant composite coating. The phase structure and section element distribution in the sulfurized layer of the composite coating are investigated through X-ray Photo Electron Spectrometry (XPS) and Auger Electron Spectroscopy (AES). The results show that the MoS2 self-lubricant phase with SO2 & CrSO4 is constituted by the sulfur which is infiltrated in low temperature ion. The oxidation in sulfurized layer is caused by the residual gas in the process of sulfurizing and the air contacted by stored samples. It is found that the oxidation in the sulfurized layer could be avoided by means of cutting off oxygen, such as vacuum packaging. The single-ingredient MoS2 layer could be obtained through improving the technological conditions of sulfurizing and avoiding oxidation of the sulfurized layer in the process of sulfurizing.