CAJ | 학술논문

脉冲激光可有效模拟重离子触发芯片的单粒子效应。本工作在应用背部激光试验方法辐照芯片时观察到了二次光斑现象，通过Si衬底和Si晶圆片研究了芯片单粒子效应实验中二次光斑的成因。实验结果表明，二次光斑主要是由于激光在芯片有源区附近的金属布线层反射形成的。通过测量芯片的Si衬底厚度以及激光触发芯片单粒子效应时的聚焦深度，实验验证了二次光斑是在金属布线层区域形成的。
맥충격광가유효모의중리자촉발심편적단입자효응。본공작재응용배부격광시험방법복조심편시관찰도료이차광반현상，통과Si츤저화Si정원편연구료심편단입자효응실험중이차광반적성인。실험결과표명，이차광반주요시유우격광재심편유원구부근적금속포선층반사형성적。통과측량심편적Si츤저후도이급격광촉발심편단입자효응시적취초심도，실험험증료이차광반시재금속포선층구역형성적。
The pulsed laser is an effective method to simulate single event effect (SEE) induced by heavy ions .When the laser focused on the chip surface using the backside approach ,the laser spot was observed .The experiment data of Si substrate and Si wafer show that the secondary spot is formed due to the reflection of metal layer ,and it is verified by the thickness of Si substrate and the depth of laser focusing .