功能材料
功能材料
공능재료
JOURNAL OF FUNCTIONAL MATERIALS
2014年
7期
7139-7142
,共4页
崔云先%郭立明%盛晓幸%丁万昱%安阳%赵家慧
崔雲先%郭立明%盛曉倖%丁萬昱%安暘%趙傢慧
최운선%곽립명%성효행%정만욱%안양%조가혜
Al2O3绝缘膜%薄膜热电偶%性能表征%射频偏压
Al2O3絕緣膜%薄膜熱電偶%性能錶徵%射頻偏壓
Al2O3절연막%박막열전우%성능표정%사빈편압
Al2 O3 insulating film%thin film thermocouple%properties characteristics%RF bias
制备绝缘性能良好的 Al2 O 3薄膜是研制薄膜热电偶瞬态温度传感器的关键技术之一.针对直流脉冲磁控溅射制备的 Al2 O 3绝缘薄膜总是存在针孔等缺陷,提出了利用直流脉冲磁控溅射加射频偏压技术成功制备了薄膜热电偶瞬态温度测试传感器的Al2 O 3绝缘薄膜.通过台阶仪、高阻计、扫描电子显微镜和划痕试验仪对 Al2 O 3绝缘膜的成膜厚度、绝缘性、表面形貌及膜基结合力进行了观测,结果表明,制备的 Al2 O 3绝缘膜厚度可达2.4μm;其绝缘性可达2.6×109Ω;薄膜表面光滑,成膜均匀;Al ∶ O 原子比近似为2∶3;与金属基体的结合力可达12 N.提供了一种制备高致密、高绝缘性能 Al2 O 3薄膜的简单有效的方法,为制备瞬态温度传感器提供了技术保障.
製備絕緣性能良好的 Al2 O 3薄膜是研製薄膜熱電偶瞬態溫度傳感器的關鍵技術之一.針對直流脈遲磁控濺射製備的 Al2 O 3絕緣薄膜總是存在針孔等缺陷,提齣瞭利用直流脈遲磁控濺射加射頻偏壓技術成功製備瞭薄膜熱電偶瞬態溫度測試傳感器的Al2 O 3絕緣薄膜.通過檯階儀、高阻計、掃描電子顯微鏡和劃痕試驗儀對 Al2 O 3絕緣膜的成膜厚度、絕緣性、錶麵形貌及膜基結閤力進行瞭觀測,結果錶明,製備的 Al2 O 3絕緣膜厚度可達2.4μm;其絕緣性可達2.6×109Ω;薄膜錶麵光滑,成膜均勻;Al ∶ O 原子比近似為2∶3;與金屬基體的結閤力可達12 N.提供瞭一種製備高緻密、高絕緣性能 Al2 O 3薄膜的簡單有效的方法,為製備瞬態溫度傳感器提供瞭技術保障.
제비절연성능량호적 Al2 O 3박막시연제박막열전우순태온도전감기적관건기술지일.침대직류맥충자공천사제비적 Al2 O 3절연박막총시존재침공등결함,제출료이용직류맥충자공천사가사빈편압기술성공제비료박막열전우순태온도측시전감기적Al2 O 3절연박막.통과태계의、고조계、소묘전자현미경화화흔시험의대 Al2 O 3절연막적성막후도、절연성、표면형모급막기결합력진행료관측,결과표명,제비적 Al2 O 3절연막후도가체2.4μm;기절연성가체2.6×109Ω;박막표면광활,성막균균;Al ∶ O 원자비근사위2∶3;여금속기체적결합력가체12 N.제공료일충제비고치밀、고절연성능 Al2 O 3박막적간단유효적방법,위제비순태온도전감기제공료기술보장.
The preparation of the high insulativity of Al2 O 3 film was one of key technologies of film thermocouple transient temperature sensor.The flaws such as pinhole always exist on the Al2 O 3 film prepared by direct cur-rent (DC)pulsed magnetron sputtering.The Al2 O 3 insulating film for film thermocouple transient temperature testing sensor was prepared by DC pulsed magnetron sputtering adding RF bias.The measurements for the thickness,insulativity,surface morphology and membrane adhesion of the Al2 O 3 film are operated through the steps,megger,scanning electron microscopy and scratch tester.The results show that the film is uniform,and the surface was smooth.The thickness of Al2 O 3 film prepared with 9 h by DC pulsed magnetron sputtering adding RF bias was 2.4 μm.The insulation was 2.6 × 10 9 Ω.The atom ratio of n (Al)/n (O)was 2 ∶3 for all samples.The binding force with the metal substrate was 12 N.This article provides a kind of simple and effec-tive method to preparate Al2 O 3 films,presenting high density,high insulation performance,which provides the technical support for the preparation of the transient temperature sensor.