长春理工大学学报(自然科学版)
長春理工大學學報(自然科學版)
장춘리공대학학보(자연과학판)
JOURNAL OF CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY(NATURAL SCIENCE EDITION)
2013年
6期
54-57
,共4页
微系统%金刚石薄膜齿轮%反应离子刻蚀
微繫統%金剛石薄膜齒輪%反應離子刻蝕
미계통%금강석박막치륜%반응리자각식
micro-system%diamond film gears%RIE
金刚石薄膜是最具潜力的微机械结构功能材料之一,但其极高的硬度和化学稳定性使其难以被加工成型。本文采用反应离子刻蚀方法对金刚石薄膜进行了微齿轮结构的制作研究,制作出了厚度为5μm,模数为0.003的金刚石薄膜齿轮。实验结果表明,镍钛合金薄膜和光刻胶层作为金刚石薄膜刻蚀掩模,可以获得表面平滑、轮廓清晰、侧壁陡直的金刚石薄膜图形;O2及与Ar的混合气体对金刚石薄膜图形化的刻蚀主要工艺参数如射频功率、工作气压、气体流量及反应气体成分等均对刻蚀速率和刻蚀界面形貌产生不同程度的影响。刻蚀中,当工作气压12Pa及气体流量50sccm稳定时,射频功率与刻蚀速率呈线性变化,但射频功率过高(大于135W)则掩模刻蚀生成物沉积在金刚石薄膜表面而发黑;对于给定的工艺条件下,金刚石薄膜的刻蚀速率并不强烈依赖于混合气体中氧气的含量。
金剛石薄膜是最具潛力的微機械結構功能材料之一,但其極高的硬度和化學穩定性使其難以被加工成型。本文採用反應離子刻蝕方法對金剛石薄膜進行瞭微齒輪結構的製作研究,製作齣瞭厚度為5μm,模數為0.003的金剛石薄膜齒輪。實驗結果錶明,鎳鈦閤金薄膜和光刻膠層作為金剛石薄膜刻蝕掩模,可以穫得錶麵平滑、輪廓清晰、側壁陡直的金剛石薄膜圖形;O2及與Ar的混閤氣體對金剛石薄膜圖形化的刻蝕主要工藝參數如射頻功率、工作氣壓、氣體流量及反應氣體成分等均對刻蝕速率和刻蝕界麵形貌產生不同程度的影響。刻蝕中,噹工作氣壓12Pa及氣體流量50sccm穩定時,射頻功率與刻蝕速率呈線性變化,但射頻功率過高(大于135W)則掩模刻蝕生成物沉積在金剛石薄膜錶麵而髮黑;對于給定的工藝條件下,金剛石薄膜的刻蝕速率併不彊烈依賴于混閤氣體中氧氣的含量。
금강석박막시최구잠력적미궤계결구공능재료지일,단기겁고적경도화화학은정성사기난이피가공성형。본문채용반응리자각식방법대금강석박막진행료미치륜결구적제작연구,제작출료후도위5μm,모수위0.003적금강석박막치륜。실험결과표명,얼태합금박막화광각효층작위금강석박막각식엄모,가이획득표면평활、륜곽청석、측벽두직적금강석박막도형;O2급여Ar적혼합기체대금강석박막도형화적각식주요공예삼수여사빈공솔、공작기압、기체류량급반응기체성분등균대각식속솔화각식계면형모산생불동정도적영향。각식중,당공작기압12Pa급기체류량50sccm은정시,사빈공솔여각식속솔정선성변화,단사빈공솔과고(대우135W)칙엄모각식생성물침적재금강석박막표면이발흑;대우급정적공예조건하,금강석박막적각식속솔병불강렬의뢰우혼합기체중양기적함량。
Although the diamond film is one of the most potential micromachining structures functional materials, it is rather difficult to manufactured because of its extremely high hardness and chemical stability. In this article, we applied a method for micro-gear structure producing based on Reactive Ion Etching (RIE) of diamond film and consequently produced diamond film gear which has a thickness of 5μm and a modulus of 0.003. The result of our experiments ap-plied that the diamond film pattern has smooth surface, clear contours and vertical sidewall can be produced by using NiTi alloy film and the photoresist etching together as the mask for diamond film. Etching rate and the flatness of etch-ing side can be affected by the process parameters of etching of O2 or O2/Ar mixed gas to diamond films patterning such as RF power, system pressure, flow and the proportion of mix gas. When there are pressure of 12Pa and flow of 50sccm steadily, RF power and etching rate varies linearly. While RF power is too high, higher than 135W, dia-mond film turn black for the deposited on its surface generated by the mask. For a given instant process condition,the etching rate of the diamond film isn’t strongly depends on the O2 concentration in the gas mixture.