中国光学
中國光學
중국광학
CHINESE JOURNAL OF OPTICS
2012年
1期
64-70
,共7页
张琨%岳远斌%李彤%孙小强%张大明
張琨%嶽遠斌%李彤%孫小彊%張大明
장곤%악원빈%리동%손소강%장대명
聚合物光波导%倒脊形光波导%感应耦合等离子体(ICP)刻蚀
聚閤物光波導%倒脊形光波導%感應耦閤等離子體(ICP)刻蝕
취합물광파도%도척형광파도%감응우합등리자체(ICP)각식
polymer optical waveguide%inverted ridge optical waveguide%Inductively Coupled Plasma(ICP) etching
提出了利用感应耦合等离子体(ICP)刻蚀技术提高聚合物光波导器件性能的方法,介绍了ICP刻蚀技术的原理和优点。选取聚甲基丙烯酸甲酯-甲基丙烯酸环氧丙酯(P(MMA-GMA))作为波导材料,采用氧气作为刻蚀气体,研究了ICP参数变化对刻蚀效果的影响。介绍了倒脊形光波导的制备过程,采用改变单一工艺参数的方法,分析了刻蚀效果随时间、功率、压强、气体流量等参数的变化,对参数优化后刻蚀得到的凹槽和平板结构进行了表征。实验结果表明:在天线射频功率为300 W,偏置射频功率为30 W,气体压强为0.5 Pa,氧气流速为50 cm3/min的条件下,可获得侧壁陡直、底面平整的P(MMA-GMA)凹槽结构。
提齣瞭利用感應耦閤等離子體(ICP)刻蝕技術提高聚閤物光波導器件性能的方法,介紹瞭ICP刻蝕技術的原理和優點。選取聚甲基丙烯痠甲酯-甲基丙烯痠環氧丙酯(P(MMA-GMA))作為波導材料,採用氧氣作為刻蝕氣體,研究瞭ICP參數變化對刻蝕效果的影響。介紹瞭倒脊形光波導的製備過程,採用改變單一工藝參數的方法,分析瞭刻蝕效果隨時間、功率、壓彊、氣體流量等參數的變化,對參數優化後刻蝕得到的凹槽和平闆結構進行瞭錶徵。實驗結果錶明:在天線射頻功率為300 W,偏置射頻功率為30 W,氣體壓彊為0.5 Pa,氧氣流速為50 cm3/min的條件下,可穫得側壁陡直、底麵平整的P(MMA-GMA)凹槽結構。
제출료이용감응우합등리자체(ICP)각식기술제고취합물광파도기건성능적방법,개소료ICP각식기술적원리화우점。선취취갑기병희산갑지-갑기병희산배양병지(P(MMA-GMA))작위파도재료,채용양기작위각식기체,연구료ICP삼수변화대각식효과적영향。개소료도척형광파도적제비과정,채용개변단일공예삼수적방법,분석료각식효과수시간、공솔、압강、기체류량등삼수적변화,대삼수우화후각식득도적요조화평판결구진행료표정。실험결과표명:재천선사빈공솔위300 W,편치사빈공솔위30 W,기체압강위0.5 Pa,양기류속위50 cm3/min적조건하,가획득측벽두직、저면평정적P(MMA-GMA)요조결구。
A method to improve the performance of polymer waveguide devices by Inductively Coupled Plasma(ICP) etching is proposed and the principle and advantages of ICP etching technology are introduced.Polymethyl Methacrylate-glycidyl Methacrylate(P(MMA-GMA)) is chosen as the waveguide material to study the influence of various ICP parameters on the etching results when oxygen is selected to be the process gas.Firstly,the fabrication process of an inverted ridge waveguide device is introduced in detail.Then the variations of etching results with time,powers,pressures,gas flow parameters are analyzed by changing a single process parameter.Finally,the optimized groove and the slab structures are characterized.Experimental results indicate that the waveguide surface morphology can be improved effectively and a good shape of P(MMA-GMA) groove structure can be achieved by using the optimized IPC etching parameters in an antenna RF of 300 W,a bias RF power of 30 W,a gas pressure of 0.5 Pa and a oxygen flow velocity of 50 cm3/min.