CAJ | 학술논문

将无铬化学转化新工艺与射频等离子化学气相沉积（PECVD）技术相结合，先在镁合金表面生成一层多孔结构、附着力高的化学转化膜作为过渡层，再采用PECVD技术低温沉积一层硅掺杂类金刚石（Si—DLC）薄膜复合涂层。扫描电子显微镜和拉曼光谱图分析证实，获得的薄膜由sp2和sp3键杂化的碳硅氢化合物呈层状堆积而成，薄膜均匀、平整致密；制备的薄膜为典型的类金刚石结构。原子力显微镜直观地观察到，掺杂硅的类金刚石薄膜比未掺杂的平整致密。当硅含量达到20％时，得到的DLC薄膜最为平整致密，无铬化学转化膜层均被含硅的DLC薄膜覆盖。性能测试实验表明，将化学转化膜作为中间过渡层并采用PECVD沉积合硅的DLC薄膜明显提高了镁合金基体与其的结合强度，同时也大幅度提高了镁合金的耐磨、耐高温和耐蚀性。
장무락화학전화신공예여사빈등리자화학기상침적（PECVD）기술상결합，선재미합금표면생성일층다공결구、부착력고적화학전화막작위과도층，재채용PECVD기술저온침적일층규참잡류금강석（Si—DLC）박막복합도층。소묘전자현미경화랍만광보도분석증실，획득적박막유sp2화sp3건잡화적탄규경화합물정층상퇴적이성，박막균균、평정치밀；제비적박막위전형적류금강석결구。원자력현미경직관지관찰도，참잡규적류금강석박막비미참잡적평정치밀。당규함량체도20％시，득도적DLC박막최위평정치밀，무락화학전화막층균피함규적DLC박막복개。성능측시실험표명，장화학전화막작위중간과도층병채용PECVD침적합규적DLC박막명현제고료미합금기체여기적결합강도，동시야대폭도제고료미합금적내마、내고온화내식성。
We employed the new technology of chromium-free chemical conversion surface treatment and plasma enhanced chemical vapor deposition （PECVD） to prepare diamond-like carbon （DLC） films by two steps. We initially formed a porous structure on Mg alloy substrate and took a high adhesion film as the transitional layer. We further employed PECVD technology to prepare DLC films with Si-DLC. Scanning electron microscope and Raman spectroscopy demonstrate that the films are uniform, smooth and compact, and composed of layered compounds of C, Si and H. The films also have the same characteristics as DLC. Observation through an atomic force microscope （AFM） shows that Si-DLC films are more compact than un-doping Si-DLC films. Si-DLC films are the most compact and completely cover the chemical conversion coating. Performance test shows that the intermediate layer between chemical conversion coating and Si-DLC film significantly improves the bond strength between Mg alloy substrate and DLC film. The intermediate layer also dramatically improves wear resistance, high temperature resistance and corrosion resistance capabilities of Mg alloy.