电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2012年
3期
29-32
,共4页
WSI%Cap%Layer层%优化%Polycide%应力
WSI%Cap%Layer層%優化%Polycide%應力
WSI%Cap%Layer층%우화%Polycide%응력
WSI%cap layer%optimization%polycide%stress
文章基于0.5μm CMOS工艺,研究了造成Polycide工艺中WSI剥落、色斑等异常现象的原因。同时,研究了WSI淀积前清洗、退火温度及Cap Layer层对WSI薄膜翘曲度及应力的影响,并通过实验优化,以大量的数据为依据,对影响WSI薄膜特性的工艺参数进行调试和论证,主要考察更改各条件对圆片翘曲度及应力的变化,并通过显微镜镜检圆片表面,获得了0.5μm Polycide工艺较优的工艺条件。实验结果表明,在WSI淀积后增加Cap Layer层工艺对Polycide工艺工期WSI剥落、色斑等异常有较好的改善作用,且圆片表面形貌能达到MOS器件的工艺制造要求。
文章基于0.5μm CMOS工藝,研究瞭造成Polycide工藝中WSI剝落、色斑等異常現象的原因。同時,研究瞭WSI澱積前清洗、退火溫度及Cap Layer層對WSI薄膜翹麯度及應力的影響,併通過實驗優化,以大量的數據為依據,對影響WSI薄膜特性的工藝參數進行調試和論證,主要攷察更改各條件對圓片翹麯度及應力的變化,併通過顯微鏡鏡檢圓片錶麵,穫得瞭0.5μm Polycide工藝較優的工藝條件。實驗結果錶明,在WSI澱積後增加Cap Layer層工藝對Polycide工藝工期WSI剝落、色斑等異常有較好的改善作用,且圓片錶麵形貌能達到MOS器件的工藝製造要求。
문장기우0.5μm CMOS공예,연구료조성Polycide공예중WSI박락、색반등이상현상적원인。동시,연구료WSI정적전청세、퇴화온도급Cap Layer층대WSI박막교곡도급응력적영향,병통과실험우화,이대량적수거위의거,대영향WSI박막특성적공예삼수진행조시화론증,주요고찰경개각조건대원편교곡도급응력적변화,병통과현미경경검원편표면,획득료0.5μm Polycide공예교우적공예조건。실험결과표명,재WSI정적후증가Cap Layer층공예대Polycide공예공기WSI박락、색반등이상유교호적개선작용,차원편표면형모능체도MOS기건적공예제조요구。
In this paper,the reason of WSI peeling and splash in the polycide technics was investigated basing on the 0.5μm CMOS process technics.And the effect on the WSI films＇ warpage and stress,such as cleaning condition before WSI deposition,the temperature of annealing and the cap layer was studied.Meanwhile,the process deposition parameters of WSI film were studied based on the amount experimental data.By changing the conditions of the wafer warpage and stress,checking the surface of the wafer with the help of microscope,the optimum condition of 0.5μm Polycide deposition was obtained.The results show that adding the cap layer after WSI deposition will help to decrease the occurrence of WSI films peeling and splash in the later period of polycide process,and the morphology of the wafer surface can achieve the MOS device manufacturing requirements.
