CAJ | 학술논문

采用射频磁控溅射法在石英玻璃衬底上成功制备了不同 C 掺杂浓度的 ZnO∶C 薄膜，借助于 X射线衍射仪(XRD)、霍尔测试(Hall)、X 射线光电子谱(XPS)和拉曼散射光谱(Raman)等测试手段系统研究了 ZnO 薄膜的结构、电学以及拉曼特性并分析了 C 在ZnO 薄膜中存在形式。结果表明，所有薄膜都呈纤锌矿结构并具有高度的 c 轴择优取向。随着 C 掺杂浓度的增加，薄膜的 n 型导电性能不断增强，其主要原因是ZnO 薄膜中的 C 替代 Zn 位起施主作用。
채용사빈자공천사법재석영파리츤저상성공제비료불동 C 참잡농도적 ZnO∶C 박막，차조우 X사선연사의(XRD)、곽이측시(Hall)、X 사선광전자보(XPS)화랍만산사광보(Raman)등측시수단계통연구료 ZnO 박막적결구、전학이급랍만특성병분석료 C 재ZnO 박막중존재형식。결과표명，소유박막도정섬자광결구병구유고도적 c 축택우취향。수착 C 참잡농도적증가，박막적 n 형도전성능불단증강，기주요원인시ZnO 박막중적 C 체대 Zn 위기시주작용。
Different concentration of ZnO∶C thin films were deposited on quartz glass substrates by a radio-fre-quency (RF)magnetron sputtering technique.The structure,Raman and electrical properties of ZnO∶C film were investigated by X-ray diffractometer,Raman scattering spectrum and Hall measurement system.Then, we explore the role of C in the ZnO∶C film.The results indicate that all films perform the ZnO wurtzite struc-ture with preferred c -axis orientation.The n-type conductivity enhances with the increase of C dopant,and the main explanation to be that C substitute for zinc site and act as donor.