CAJ | 학술논문

介绍了一种不需要抗反射层的多孔黑硅的制备方法．通过两步法在 n-硅上合成得到具有梯度折射的多孔金字塔型表面，该表面能有效降低硅片对太阳光的反射，对可见光区太阳光的反射率可降至2．24％，因此，有利于光电转换效率的提高．I-V曲线测试表明：多孔金字塔型硅电极的最大电流密度可达0．969 m A/cm2，光电转换效率为22．3％．
개소료일충불수요항반사층적다공흑규적제비방법．통과량보법재 n-규상합성득도구유제도절사적다공금자탑형표면，해표면능유효강저규편대태양광적반사，대가견광구태양광적반사솔가강지2．24％，인차，유리우광전전환효솔적제고．I-V곡선측시표명：다공금자탑형규전겁적최대전류밀도가체0．969 m A/cm2，광전전환효솔위22．3％．
In this paper ,a new technique is introduced for porous pyramid formation on pol-ished monocrystalline silicon wafers .The electrodes texture surface layers made by two-step etch and reflect less than 2 .24% of the visible light ,with no conventional antireflection coat-ing .T he results of illuminated current-voltage curves indicated that the saturation current density of black silicon is 0 .969 mA/cm2 and the photoelectric conversion efficiency is 22 .4% ,which is better than polished wafer and pyramid texture wafer .