CAJ | 학술논문

使用微细加工和磁控溅射技术将Al/MoO x 纳米复合薄膜集成于半导体桥（ SCB ），制成含能半导体桥SCB-Al/MoO x 以提高SCB的点火能力。薄膜的SEM、DCS和XPS结果表明，复合薄膜成膜质量好，层状结构清晰，放热量可达3200 J/g，达到理论值的68％（理论放热量为4703 J/g），MoOx 薄膜含有32％的MoO3、37％的Mo2O5以及31％的MoO2。电容激励发火实验表明：相同激发条件下， SCB-Al/MoOx 反应终止时间较SCB显著缩短，能量输出效率高于SCB ，发火时溅射出的火花量明显增多，持续时间显著延长，使用原子发射双谱线测温法得到的等离子体温度亦高于SCB。
사용미세가공화자공천사기술장Al/MoO x 납미복합박막집성우반도체교（ SCB ），제성함능반도체교SCB-Al/MoO x 이제고SCB적점화능력。박막적SEM、DCS화XPS결과표명，복합박막성막질량호，층상결구청석，방열량가체3200 J/g，체도이론치적68％（이론방열량위4703 J/g），MoOx 박막함유32％적MoO3、37％적Mo2O5이급31％적MoO2。전용격려발화실험표명：상동격발조건하， SCB-Al/MoOx 반응종지시간교SCB현저축단，능량수출효솔고우SCB ，발화시천사출적화화량명현증다，지속시간현저연장，사용원자발사쌍보선측온법득도적등리자체온도역고우SCB。
An energetic semiconductor bridge, SCB-Al/MoOx, was made using Al/MoOx nano multilayer films integrated with semiconductor bridge ( SCB ) by micro machining technology and magnetron sputtering technology , and accordingly its ignition capacity was enhanced .The Al/MoOx films were identified by SEM , DSC and XPS.Results show that distinct Al/MoOx multilayer films are formed by means of sputter deposited on a layered geometry .The heat generation could reach to 3200 J/g, which is 68%of the theoretical value (4703 J/g).MoOx films contain MoO3(32%), Mo2O5 (37%) and MoO2(31%), respectively.In capacitance triggered firing experiments , the terminal time of SCB-Al/MoOx reaction is shorter , while the energy output efficiency is higher than those of SCB .Moreover, sparks in the fire increase obviously, and their duration time is extended .The exothermic reactions in Al/MoOx films sustain SCB to generate plasma of higher temperatures .