CAJ | 학술논문

对自主研发的多羟多胺络合剂(FA/O )在硅通孔技术(Through-silicon-via,TSV)化学机械平坦化(chemical mechanical planarization,CMP)进行了应用研究。结果表明,FA/O 络合剂较其它常用络合剂在碱性CMP 条件下对铜有较高的去除速率,抛光液中不加FA/O 络合剂时,铜的去除速率仅为45.0 nm/min,少量FA/O 的加入迅速提高了铜膜去除速率,当FA/O 含量为50 mL/L时,铜去除速率趋于平缓。在TSV Cu CMP中应用表明,FA/O 对铜的去除率可高达2.8μm/min,满足微电子技术进一步发展的要求。
대자주연발적다간다알락합제(FA/O )재규통공기술(Through-silicon-via,TSV)화학궤계평탄화(chemical mechanical planarization,CMP)진행료응용연구。결과표명,FA/O 락합제교기타상용락합제재감성CMP 조건하대동유교고적거제속솔,포광액중불가FA/O 락합제시,동적거제속솔부위45.0 nm/min,소량FA/O 적가입신속제고료동막거제속솔,당FA/O 함량위50 mL/L시,동거제속솔추우평완。재TSV Cu CMP중응용표명,FA/O 대동적거제솔가고체2.8μm/min,만족미전자기술진일보발전적요구。
A polyhydroxy polyamino complexing agent (FA/O)has been developed and applied in through-sili-con-via (TSV)chemical mechanical planarization (CMP).The comparision experiment of FA/O with another normal complexing agents has been carried out,the results reveal that FA/O has a efficient effect on removal of copper in alkaline condition,few FA/O added in slurry will significantly improve the removal rate of copper. However,when we continue to add FA/O in solution,the removal rate of copper will stay leveling.The result of TSV Cu CMP reveal that the removal rate of copper can be achieved 2.8μm/min,it can meet the require-ment of development of microelectronic technology.