CAJ | 학술논문

通过10带k·p 模型计算，设计了能够激发3μm波长的InxGa1-xAs1-yNy/AlAs量子阱结构的量子级联激光器有源区。InxGa1-xAs1-yNy/AlAs 异质结结构具有极宽的导带阶跃(～1.5 eV)，并且能够通过成熟的GaAs基工艺生长，因此采用这种结构制作短波量子级联激光器已成为研究热点。通过计算能带结构以及相应的波函数，发现当导带带阶非常大以致于第一激发态位于氮能级之上时，电子基态以及第一激发态会分裂为两条能级。正是由于这种效应的存在，提升了激光上能级的能量而促使激发波长缩短。通过一系列计算得出了一种最优化的基于In0.2Ga0.8As0.99N0.01/AlAs的三重耦合量子阱结构。在工作电压为65 kV/cm以及室温的条件下，最短的激光波长可以达到3μm。
통과10대k·p 모형계산，설계료능구격발3μm파장적InxGa1-xAs1-yNy/AlAs양자정결구적양자급련격광기유원구。InxGa1-xAs1-yNy/AlAs 이질결결구구유겁관적도대계약(～1.5 eV)，병차능구통과성숙적GaAs기공예생장，인차채용저충결구제작단파양자급련격광기이성위연구열점。통과계산능대결구이급상응적파함수，발현당도대대계비상대이치우제일격발태위우담능급지상시，전자기태이급제일격발태회분렬위량조능급。정시유우저충효응적존재，제승료격광상능급적능량이촉사격발파장축단。통과일계렬계산득출료일충최우화적기우In0.2Ga0.8As0.99N0.01/AlAs적삼중우합양자정결구。재공작전압위65 kV/cm이급실온적조건하，최단적격광파장가이체도3μm。
The design of an active region of InxGa1-xAs1-yNy/AlAs quantum cascade laser structure emitting near the 3μm wavelength based on the ten- band k·p model was reported. The InxGa1-xAs1-yNy/AlAs heterostructure system is of significant interest for the development of short wavelength quantum cascade lasers due to its large conduction band discontinuity (~1.5 eV) and compatibility with the mature GaAs fabrication process. From the calculations on the energy dispersions and wave functions of the respective states, it is found that when the conduction band offset is very large so that the first excited state lies above the localized nitrogen level, each of the ground and the first excited states is split into two levels. This effect causes the upper lasing level rising so that the lasing wavelength will be shortened. Finally, an optimized combination of In0.2Ga0.8As0.99N0.01/AlAs three- coupled- well structure was obtained. Under an applied field of 65 kV/cm and at room temperature, a shortest laser emission wavelength of 3μm can be achieved.