CAJ | 학술논문

本文提出了一种通过电学瞬态温度响应测量检测半导体器件芯片级温度均匀性的方法。实验证明器件的芯片级热不均匀性与加热响应曲线第一级台阶的高度呈现单调关系。在基于有限元方法的三维瞬态温度模拟及基于电学温敏参数法的测量结果中均可观测到这一现象。我们同样利用红外热成像法测量了器件在不同电流分布下的温度分布情况，利用热谱法定量分析了对应的芯片级温度不均匀性，其结果与本文所提出的方法的分析结果相吻合。
본문제출료일충통과전학순태온도향응측량검측반도체기건심편급온도균균성적방법。실험증명기건적심편급열불균균성여가열향응곡선제일급태계적고도정현단조관계。재기우유한원방법적삼유순태온도모의급기우전학온민삼수법적측량결과중균가관측도저일현상。아문동양이용홍외열성상법측량료기건재불동전류분포하적온도분포정황，이용열보법정량분석료대응적심편급온도불균균성，기결과여본문소제출적방법적분석결과상문합。
In this paper, a method to evaluate the chip-level thermal uniformity of semiconductor devices by electrical transient thermal response testing is proposed. It’s found that the degree of the chip’s thermal non-uniformity presents a monotonic increasing relationship with the height of the first step of heating response curves. This phenomenon is observed both in a 3-dimensional transient thermal simulation based on the finite element method (FEM) and transient thermal measurements by electrical temperature sensitive parameter (TSP) method. Chip’s surface temperature distributions under different current distributions are also measured by infrared image method and the thermal spectrum method is adopted to analyze the temperature non-uniformity quantitatively. The relationship between the degree of temperature non-uniformity and current distribution is consistent with the result of our proposed method.