CAJ | 학술논문

本文提出了一种封闭形式的分析方法来提取硅基在片变压器等效电路的模拟参数。运用一种新的去耦合技术以降低变压器的Y参数复杂度，使得模型参数可由一组特性函数分析提取得出。基于解析法提取得到的参数对不同变压器结构进行了模拟，结果与三维全波电磁场仿真对比具有良好的精确度。本文提出的方法对于建立硅基射频变压器的可扩展的宽带密集电路模型具有十分重要的意义。
본문제출료일충봉폐형식적분석방법래제취규기재편변압기등효전로적모의삼수。운용일충신적거우합기술이강저변압기적Y삼수복잡도，사득모형삼수가유일조특성함수분석제취득출。기우해석법제취득도적삼수대불동변압기결구진행료모의，결과여삼유전파전자장방진대비구유량호적정학도。본문제출적방법대우건립규기사빈변압기적가확전적관대밀집전로모형구유십분중요적의의。
In this paper we propose a closed-form analytical approach to extracting all the model parameters for the equivalent circuit of Si-based on-chip transformers. A novel de-coupling technique is first developed to reduce the complexity in the Y parameters for the transformer, and the model parameters can then be extracted analytically using a set of characteristic functions. Simulation based on the extracted parameters has been carried out for transformers with different structures, and a good accuracy was obtained compared to a 3-demensional full-wave numerical electro-magnetic field solver. The presented approach will be very useful to provide a scalable and wide-band compact circuit model for Si-based RF transformers.