新型工业化
新型工業化
신형공업화
New Industrialization Straregy
2011年
5期
30-36
,共7页
SET%双极放大效应%混合模拟
SET%雙極放大效應%混閤模擬
SET%쌍겁방대효응%혼합모의
SET%Bipolar Ampification Effect%Mixed-mode simulation
基于3D混合模拟，研究了180nm CMOS工艺下了温度对SET脉冲的影响。研究发现，温度对数字SET有重要影响。使用60MeV cm2/mg的LET，当温度从-55℃增加到125℃时，数字SET脉冲宽度显著增加。分析显示脉冲随温度展宽的原因是由于双极放大效应随温度增加而增强。
基于3D混閤模擬，研究瞭180nm CMOS工藝下瞭溫度對SET脈遲的影響。研究髮現，溫度對數字SET有重要影響。使用60MeV cm2/mg的LET，噹溫度從-55℃增加到125℃時，數字SET脈遲寬度顯著增加。分析顯示脈遲隨溫度展寬的原因是由于雙極放大效應隨溫度增加而增彊。
기우3D혼합모의，연구료180nm CMOS공예하료온도대SET맥충적영향。연구발현，온도대수자SET유중요영향。사용60MeV cm2/mg적LET，당온도종-55℃증가도125℃시，수자SET맥충관도현저증가。분석현시맥충수온도전관적원인시유우쌍겁방대효응수온도증가이증강。
Using three-dimensional mixed-mode simulation, temperature dependence of digital SET pulse width in 180nm CMOS technology has been studied. It was found that temperature has a very important impact on digital SET. Usinga LET of 60 MeV cm2/mg, when temperature rises from-55°C to 125°C, the digital SET pulse width rises remarkably. Detailed analysis showed that pulse broadening with rising temperature is primarily due to enhancement of bipolar amplification.
