CAJ | 학술논문

报道了一种使用氧化物纳米线(ZnO)构建的新型太赫兹探测器。首先合成了高品质的ZnO 纳米线，并且以此制备了场效应管。通过电输运测量得出 ZnO 纳米线具有高的开关比和良好的场效应迁移率，因此 ZnO 纳米线可作为基于一维场效应管模型的太赫兹探测器的感应端。在室温下不同强度的入射太赫兹波(0.3 THz)都可引起光电压。此外，进一步的分析证明太赫兹波的光敏效应是由于 ZnO 样品自身的高迁移率引起的，这也说明了氧化物纳米电子学将在太赫兹领域得到更广阔的应用。
보도료일충사용양화물납미선(ZnO)구건적신형태혁자탐측기。수선합성료고품질적ZnO 납미선，병차이차제비료장효응관。통과전수운측량득출 ZnO 납미선구유고적개관비화량호적장효응천이솔，인차 ZnO 납미선가작위기우일유장효응관모형적태혁자탐측기적감응단。재실온하불동강도적입사태혁자파(0.3 THz)도가인기광전압。차외，진일보적분석증명태혁자파적광민효응시유우 ZnO 양품자신적고천이솔인기적，저야설명료양화물납미전자학장재태혁자영역득도경엄활적응용。
An oxide nanowire material(ZnO) is utilized for terahertz detection purpose. High quality ZnO nanowiresare synthesized and Field Effect Transistors(FETs) are fabricated. Electrical transport measurements demonstrate high on/off ratio, and fairly good field effect mobility. It is shown that ZnO nanowires can be used as building blocks for the implementation of terahertz detectors based on a one-dimensional FET configuration. Clear terahertz wave(0.3THz) induced photovoltage at 0.3THz is obtained at room temperature with varied signal incidence intensities. In addition, further analysis indicates that the terahertz photoresponse is closely related to the high mobility in the ZnO nanowire sample, which suggests that oxide nanoelectronics may find useful terahertz applications.