太赫兹科学与电子信息学报
太赫玆科學與電子信息學報
태혁자과학여전자신식학보
Information and Electronic Engineering
2014年
5期
644-646,652
,共4页
郭超%罗振飞%王度%孔维鹏%孙年春%杨存榜%周逊
郭超%囉振飛%王度%孔維鵬%孫年春%楊存榜%週遜
곽초%라진비%왕도%공유붕%손년춘%양존방%주손
太赫兹%VO2薄膜%开关器件%热致相变
太赫玆%VO2薄膜%開關器件%熱緻相變
태혁자%VO2박막%개관기건%열치상변
terahertz%vanadium dioxide thin film%switching device%thermal induced transition
二氧化钒(VO2)作为一种优质的光电功能材料一直备受人们的关注,在信息存储、光调制器、太阳能电池、光电探测器等方面有着重要应用。采用磁控溅射及原位退火氧化的“两步法”制备了 VO2薄膜,并对其进行晶态、形貌表征。设计并搭建 VO2薄膜热致相变实验系统,研究了VO2薄膜在变温条件下对2.52 THz辐射的开关特性。结果表明,VO2薄膜样品为多晶态,具有明显的太赫兹调制效果,可以实现对2.52 THz波的调制,并可作为太赫兹开关/调制器件的功能材料。
二氧化釩(VO2)作為一種優質的光電功能材料一直備受人們的關註,在信息存儲、光調製器、太暘能電池、光電探測器等方麵有著重要應用。採用磁控濺射及原位退火氧化的“兩步法”製備瞭 VO2薄膜,併對其進行晶態、形貌錶徵。設計併搭建 VO2薄膜熱緻相變實驗繫統,研究瞭VO2薄膜在變溫條件下對2.52 THz輻射的開關特性。結果錶明,VO2薄膜樣品為多晶態,具有明顯的太赫玆調製效果,可以實現對2.52 THz波的調製,併可作為太赫玆開關/調製器件的功能材料。
이양화범(VO2)작위일충우질적광전공능재료일직비수인문적관주,재신식존저、광조제기、태양능전지、광전탐측기등방면유착중요응용。채용자공천사급원위퇴화양화적“량보법”제비료 VO2박막,병대기진행정태、형모표정。설계병탑건 VO2박막열치상변실험계통,연구료VO2박막재변온조건하대2.52 THz복사적개관특성。결과표명,VO2박막양품위다정태,구유명현적태혁자조제효과,가이실현대2.52 THz파적조제,병가작위태혁자개관/조제기건적공능재료。
As a high-quality optoelectronic material, vanadium dioxide(VO2) has drawn much attention over the past years, and it shows great potential for various applications such as information storage device, optical modulator, energy-saving, infrared detector, etc. In this work, nanocrystalline VO2 thin films are prepared by reactive direct current magnetron sputtering and in-situ oxidation annealing, and the microstructures and optical properties of films are investigated. In order to study the switching characteristic of VO2 thin film to 2.52 THz radiation under varied temperature conditions, the corresponding testing system is established. The results show that the VO2 thin film is polycrystalline, exhibiting obvious modulation effect on the terahertz wave at 2.52 THz, which makes VO2 thin film a promising functional material for the terahertz switching/modulation devices.