CAJ | 학술논문

本文阐述了一种应用于医疗探测的工作在407～425MHz频段的电感复用射频前端芯片。本射频前端芯片由超低功耗电流复用LNA、Mixer和高发射效率PA构成。本文提出了一种新型的电感复用射频前端结构，通过接收机和发射机输入输出共用电感，不仅有效避免了双工器的使用降低了芯片成本，而且节省了片外元件的数量，满足了高集成度的应用要求。该射频前端芯片在0．18μm标准CMOS工艺下进行了流片，芯片面积0．43mm2。作为接收机和发射机使用时，射频前端功耗分别为0．45mA和1．53mA，是一款超低功耗、高集成度的射频前端芯片。
본문천술료일충응용우의료탐측적공작재407～425MHz빈단적전감복용사빈전단심편。본사빈전단심편유초저공모전류복용LNA、Mixer화고발사효솔PA구성。본문제출료일충신형적전감복용사빈전단결구，통과접수궤화발사궤수입수출공용전감，불부유효피면료쌍공기적사용강저료심편성본，이차절성료편외원건적수량，만족료고집성도적응용요구。해사빈전단심편재0．18μm표준CMOS공예하진행료류편，심편면적0．43mm2。작위접수궤화발사궤사용시，사빈전단공모분별위0．45mA화1．53mA，시일관초저공모、고집성도적사빈전단심편。
This paper presents an ultra-low power inductor-sharing 407-425MHz RF front-end ( FE ) chipset for medical applications. The RF FE is composed of the ultra-low power current-reuse LNA PA. By sharing an inductor for both receiver and transmitter, a novel inductor-reuse RF save the use of T/R switch, which saves the cost of chip and meets the requirement of high implemented in a standard 0.18 μ m CMOS process with chip area of 0.43mm2.The powe , Mixer and high-efficient FE structure is proposed to integration. The RF FE is r consumption of RF FE is 0.45mA and 1.53mA, respectively, which demonstrates an ultra-low power, high-integration RF FE