电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2013年
10期
44-48
,共5页
炉管%堆叠式内存%非选择性半球状多晶硅%片数效应
爐管%堆疊式內存%非選擇性半毬狀多晶硅%片數效應
로관%퇴첩식내존%비선택성반구상다정규%편수효응
furnace%stacked DRAM%non-selective hemispherical grained polysilicon%loading effect
随着动态随机存取存储器(内存)线宽的缩小，需要半球状多晶硅等新技术来增大电容。当前对选择性半球状多晶硅论述较多，非选择性半球状多晶硅则较少提到。文中讲述的是炉管非选择性半球状多晶硅在0.13μm堆叠式内存上的实际应用，侧重于解决片数效应。炉管非选择性半球状多晶硅的下电极阻值具有非常严重的片数效应，电容的下极板电阻从炉管底部向上增高，并随着产品片数的增加而增高，导致上部产品良率偏低，一个制程只能生产一批产品。通过对非选择性半球状多晶硅的制程原理及硬件构造进行分析，发现片数效应是由于籽晶沉积阶段的硅烷流量通常非常小，只有10~15标准毫升，它在硅片上的分布密度会随着产品的增多而沿气流方向减少，沿气流方向的硅片只好通过增加籽晶和迁移步骤的温度来拉起更多的基体硅进入半球体，相应的剩余基体硅就会变薄，这就导致了下电极阻值的增高。文章根据该发现，提出了炉管非选择性半球状多晶硅片数效应的解决方法。
隨著動態隨機存取存儲器(內存)線寬的縮小，需要半毬狀多晶硅等新技術來增大電容。噹前對選擇性半毬狀多晶硅論述較多，非選擇性半毬狀多晶硅則較少提到。文中講述的是爐管非選擇性半毬狀多晶硅在0.13μm堆疊式內存上的實際應用，側重于解決片數效應。爐管非選擇性半毬狀多晶硅的下電極阻值具有非常嚴重的片數效應，電容的下極闆電阻從爐管底部嚮上增高，併隨著產品片數的增加而增高，導緻上部產品良率偏低，一箇製程隻能生產一批產品。通過對非選擇性半毬狀多晶硅的製程原理及硬件構造進行分析，髮現片數效應是由于籽晶沉積階段的硅烷流量通常非常小，隻有10~15標準毫升，它在硅片上的分佈密度會隨著產品的增多而沿氣流方嚮減少，沿氣流方嚮的硅片隻好通過增加籽晶和遷移步驟的溫度來拉起更多的基體硅進入半毬體，相應的剩餘基體硅就會變薄，這就導緻瞭下電極阻值的增高。文章根據該髮現，提齣瞭爐管非選擇性半毬狀多晶硅片數效應的解決方法。
수착동태수궤존취존저기(내존)선관적축소，수요반구상다정규등신기술래증대전용。당전대선택성반구상다정규논술교다，비선택성반구상다정규칙교소제도。문중강술적시로관비선택성반구상다정규재0.13μm퇴첩식내존상적실제응용，측중우해결편수효응。로관비선택성반구상다정규적하전겁조치구유비상엄중적편수효응，전용적하겁판전조종로관저부향상증고，병수착산품편수적증가이증고，도치상부산품량솔편저，일개제정지능생산일비산품。통과대비선택성반구상다정규적제정원리급경건구조진행분석，발현편수효응시유우자정침적계단적규완류량통상비상소，지유10~15표준호승，타재규편상적분포밀도회수착산품적증다이연기류방향감소，연기류방향적규편지호통과증가자정화천이보취적온도래랍기경다적기체규진입반구체，상응적잉여기체규취회변박，저취도치료하전겁조치적증고。문장근거해발현，제출료로관비선택성반구상다정규편수효응적해결방법。
Because advanced DRAM technology continue to shrink the cell area, capacitance enhancement technology such as hemispherical grain polysilicon need to be applied. There are many papers to study selective hemispherical grain polysilicon, but the papers of batch type non-selective Hemispherical grain polysilicon are few. This paper mainly solves batch type non-selective hemispherical grain polysilicon loading effect issue for 0.13μm stacked DRAM mass production. The electrode resistance trends up along with batch size increasing. The wafer yield drops remarkably if the batch size is over 25 pieces. From hardware and experiment data analysis, this paper finds the seeding silane flow is the root cause. It is too small to cover the full boat along with product surface increasing. Based on the finding, this paper summary the solution of the loading effect of batch type non-selective hemispherical grain polysilicon for mass production.
