中国有色金属学报(英文版)
中國有色金屬學報(英文版)
중국유색금속학보(영문판)
TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA
2013年
11期
3286-3292
,共7页
邢俊恒%夏正斌%李辉%王莹莹%钟理
邢俊恆%夏正斌%李輝%王瑩瑩%鐘理
형준항%하정빈%리휘%왕형형%종리
阳极氧化%溅射沉积钛%结晶%低电位%循环伏安法
暘極氧化%濺射沉積鈦%結晶%低電位%循環伏安法
양겁양화%천사침적태%결정%저전위%순배복안법
anodization%sputter-deposited titanium%crystallization%low potential%cyclic voltammetry (CV)
以磁控溅射法沉积在单晶硅片上的钛薄膜样品为工作电极,以循环伏安法为阳极氧化方式,研究极低电位下钛表面氧化膜的生长与结晶行为。通过AFM、SE和XPS等手段表征钛表面阳极氧化膜的表面形貌、结晶性和化学组成。结果表明,即使在低至1000 mV的电位下,所形成的阳极氧化钛薄膜也是结晶的,而不是无定型的。升高氧化电位或者降低电位扫描速率都有利于钛氧化膜的形成和结晶。认为,在极低的电位下,产生于氧化膜/金属界面的内在压应力是导致钛氧化物结晶形成的主要原因,而不是被研究者们所普遍接受的焦耳热。
以磁控濺射法沉積在單晶硅片上的鈦薄膜樣品為工作電極,以循環伏安法為暘極氧化方式,研究極低電位下鈦錶麵氧化膜的生長與結晶行為。通過AFM、SE和XPS等手段錶徵鈦錶麵暘極氧化膜的錶麵形貌、結晶性和化學組成。結果錶明,即使在低至1000 mV的電位下,所形成的暘極氧化鈦薄膜也是結晶的,而不是無定型的。升高氧化電位或者降低電位掃描速率都有利于鈦氧化膜的形成和結晶。認為,在極低的電位下,產生于氧化膜/金屬界麵的內在壓應力是導緻鈦氧化物結晶形成的主要原因,而不是被研究者們所普遍接受的焦耳熱。
이자공천사법침적재단정규편상적태박막양품위공작전겁,이순배복안법위양겁양화방식,연구겁저전위하태표면양화막적생장여결정행위。통과AFM、SE화XPS등수단표정태표면양겁양화막적표면형모、결정성화화학조성。결과표명,즉사재저지1000 mV적전위하,소형성적양겁양화태박막야시결정적,이불시무정형적。승고양화전위혹자강저전위소묘속솔도유리우태양화막적형성화결정。인위,재겁저적전위하,산생우양화막/금속계면적내재압응력시도치태양화물결정형성적주요원인,이불시피연구자문소보편접수적초이열。
Growth and crystallization of titanium anodized films were studied by performing the anodization of the sputter-deposited titanium samples under cyclic voltammetry (CV) mode at very low potentials. The surface features, crystalline behaviors and chemical compositions of the formed anodic oxide layers were detected by AFM, SE and XPS. It was found that the structure of the titanium anodized films is crystalline, even though the maximum oxidation potential (φmax) is very low (as low as 1000 mV). Both enlarging the applied voltage and reducing the potential scanning rate are beneficial for the growth and crystallization of titanium oxide films. It was thought that the internal compressive stress, other than the local joule heating accepted for many researchers, is the main force of stimulating the crystallization of anodic titanium oxide films at very low potentials.