物理
物理
물리
2013年
12期
873-880
,共8页
秋沉沉%张昕%周乾飞%吴晓京
鞦沉沉%張昕%週乾飛%吳曉京
추침침%장흔%주건비%오효경
相变材料%脉冲激光沉积%N掺杂Sb2Te3%低功耗
相變材料%脈遲激光沉積%N摻雜Sb2Te3%低功耗
상변재료%맥충격광침적%N참잡Sb2Te3%저공모
phase-change material%pulsed laser deposition(PLD)%N-doped Sb2Te3%low power consumption
Sb2Te3(ST)薄膜虽然具有高结晶速度和低结晶温度(~132℃)等优点,但由于复位电压过高,无法直接用于制备相变存储器件。文章作者尝试使用脉冲激光沉积法(PLD)制备了氮掺杂的Sb2Te3薄膜。用原子力显微镜(AFM)对此薄膜进行测试的结果表明,脉冲激光沉积法制备的生成态ST薄膜和氮掺杂ST薄膜表面粗糙度分别为0.12 nm和0.58 nm,表面较为平整。研究表明,PLD法制备的氮掺杂ST薄膜具有更好的组分稳定性,可显著提高薄膜低阻态电阻值,降低复位功耗,氮掺杂量在6 at%的ST薄膜的置位电压和复位电压适中,显示出较好的综合性能。
Sb2Te3(ST)薄膜雖然具有高結晶速度和低結晶溫度(~132℃)等優點,但由于複位電壓過高,無法直接用于製備相變存儲器件。文章作者嘗試使用脈遲激光沉積法(PLD)製備瞭氮摻雜的Sb2Te3薄膜。用原子力顯微鏡(AFM)對此薄膜進行測試的結果錶明,脈遲激光沉積法製備的生成態ST薄膜和氮摻雜ST薄膜錶麵粗糙度分彆為0.12 nm和0.58 nm,錶麵較為平整。研究錶明,PLD法製備的氮摻雜ST薄膜具有更好的組分穩定性,可顯著提高薄膜低阻態電阻值,降低複位功耗,氮摻雜量在6 at%的ST薄膜的置位電壓和複位電壓適中,顯示齣較好的綜閤性能。
Sb2Te3(ST)박막수연구유고결정속도화저결정온도(~132℃)등우점,단유우복위전압과고,무법직접용우제비상변존저기건。문장작자상시사용맥충격광침적법(PLD)제비료담참잡적Sb2Te3박막。용원자력현미경(AFM)대차박막진행측시적결과표명,맥충격광침적법제비적생성태ST박막화담참잡ST박막표면조조도분별위0.12 nm화0.58 nm,표면교위평정。연구표명,PLD법제비적담참잡ST박막구유경호적조분은정성,가현저제고박막저조태전조치,강저복위공모,담참잡량재6 at%적ST박막적치위전압화복위전압괄중,현시출교호적종합성능。
Although Sb2Te3 (ST) has the merits of fast crystallization speed and low crystalli-zation temperature (132oC), it cannot be directly used in phase change random access memories due to its high reset voltage. In this study, N-doped ST thin films with different nitrogen concentrations were deposited by pulsed laser deposition (PLD). Atomic force microscopy showed that the surface rough-ness of as-grown and N-doped ST thin films was 0.12 nm and 0.58 nm, respectively. The N-doped films possesed better component stability, with significantly higher resistivity in the low resistance state and so lower reset voltages. The optimum set and reset voltages were obtained for films with a ni-trogen concentration of 6 at%, resulting in lower power consumption and good overall performance.