物理实验
物理實驗
물리실험
PHYSICS EXPERIMENTATION
2014年
6期
1-6
,共6页
掺铝氧化锌薄膜%衬底温度%电阻率%透射率
摻鋁氧化鋅薄膜%襯底溫度%電阻率%透射率
참려양화자박막%츤저온도%전조솔%투사솔
aluminum-doped zinc oxide film%substrate temperature%resistivity%transmissivity
利用射频磁控溅射在石英基片上沉积掺铝氧化锌薄膜，研究了衬底温度对薄膜结构和光电性能的影响．当给衬底加热时，X射线衍射观测（002）峰相对强度明显增强．在衬底温度250℃下制备的薄膜的晶粒尺寸最大，为24．9 nm ，表面粗糙度最小，为8．1 nm ，表明在衬底温度250℃下制备的薄膜的结晶效果最好．衬底温度从30℃升高到250℃，薄膜的电阻率相应地从14．35×10-4Ω· cm降低到7．18×10-4Ω· cm ，随着衬底温度的升高，电阻率反而增大．所有样品在可见光区的平均光学透射率都大于85％．引入品质因子分析薄膜的光电性能，当衬底温度为250℃时，品质因子最大为16．15×10-3Ω-1，其光电性能最好．
利用射頻磁控濺射在石英基片上沉積摻鋁氧化鋅薄膜，研究瞭襯底溫度對薄膜結構和光電性能的影響．噹給襯底加熱時，X射線衍射觀測（002）峰相對彊度明顯增彊．在襯底溫度250℃下製備的薄膜的晶粒呎吋最大，為24．9 nm ，錶麵粗糙度最小，為8．1 nm ，錶明在襯底溫度250℃下製備的薄膜的結晶效果最好．襯底溫度從30℃升高到250℃，薄膜的電阻率相應地從14．35×10-4Ω· cm降低到7．18×10-4Ω· cm ，隨著襯底溫度的升高，電阻率反而增大．所有樣品在可見光區的平均光學透射率都大于85％．引入品質因子分析薄膜的光電性能，噹襯底溫度為250℃時，品質因子最大為16．15×10-3Ω-1，其光電性能最好．
이용사빈자공천사재석영기편상침적참려양화자박막，연구료츤저온도대박막결구화광전성능적영향．당급츤저가열시，X사선연사관측（002）봉상대강도명현증강．재츤저온도250℃하제비적박막적정립척촌최대，위24．9 nm ，표면조조도최소，위8．1 nm ，표명재츤저온도250℃하제비적박막적결정효과최호．츤저온도종30℃승고도250℃，박막적전조솔상응지종14．35×10-4Ω· cm강저도7．18×10-4Ω· cm ，수착츤저온도적승고，전조솔반이증대．소유양품재가견광구적평균광학투사솔도대우85％．인입품질인자분석박막적광전성능，당츤저온도위250℃시，품질인자최대위16．15×10-3Ω-1，기광전성능최호．
Transparent conducting aluminum-doped zinc oxide (ZnO :Al) films were deposited on glass substrates by radio frequency magnetron sputtering .The effects of substrate temperature on structure and photoelectric properties were investigated .When the substrate was heated ,the intensity of (002) peak increased .The maximum grain size and minimum surface roughness of the films pre-pared at 250 ℃ were 24 .9 nm and 8 .1 nm ,respectively .The best crystallization in thin films was ob-tained at 250 ℃ .The resistivity of the films decreased from 14 .35 × 10-4 Ω· cm to 7 .18 × 10-4 Ω· cm as the substrate temperature increased from 30 ℃ to 250 ℃ .But further increase of the substrate tem-perature increased the resistivity .The average transmissivity in the visible spectrum for all samples was larger than 85% .The quality factor was introduced to analyze the conductivity and transmittance of AZO films .The maximum quality factor for 16 .15 × 10-3 Ω -1 was got when the substrate tempera-ture was 250 ℃ .
