CAJ | 학술논문

对基于热氧化法的CuO纳米线阵列的生长进行了研究，考察了热氧化温度、时间、镀膜工艺和热退火等因素对纳米线生长的影响，得到了适合 CuO 纳米线生长的最佳条件，并推测了可能的生长规律和生长机理。此外，将PVD技术和硅基平面工艺相结合制备了Al/CuO纳米线含能阵列，并进行了表征和点火测试。
대기우열양화법적CuO납미선진렬적생장진행료연구，고찰료열양화온도、시간、도막공예화열퇴화등인소대납미선생장적영향，득도료괄합 CuO 납미선생장적최가조건，병추측료가능적생장규률화생장궤리。차외，장PVD기술화규기평면공예상결합제비료Al/CuO납미선함능진렬，병진행료표정화점화측시。
In this paper, CuO nanowire arrays by thermal oxidation were studied, as well as the influences of temperature, duration, coating processes and thermal annealing on the growth of nanowires. The optimum conditions,growth regularity and mechanism were summarized. Through combining PVD technology and silicon based technology,nano-energetic material of Al/CuO nano-wire arrays were prepared and characterized.