银基透明导电薄膜制备及其性能研究
은기투명도전박막제비급기성능연구
Preparation of Ag-based transparent conductive films and their characteristics
  • 万方数据
    真空 진공
    VACUUM
    2014年 5期 9-12 ,共4页

    陆浙%周琳%朱峰%陈奕卫%陈晓红%孙卓

    륙절%주림%주봉%진혁위%진효홍%손탁

    透明导电薄膜%磁控溅射%银膜%热稳定性 透明導電薄膜%磁控濺射%銀膜%熱穩定性
    투명도전박막%자공천사%은막%열은정성
    transparent conducting film%magnetron sputtering%Ag films%thermal stability
    采用磁控溅射方法制备了 ZnO/Ag/ZnO、AZO/Ag/AZO 三层和 AZO/LiF/Ag/LiF/AZO、AZO/Al/Ag/Al/AZO 五层透明导电薄膜，该体系薄膜450~700 nm 的平均透过率在80%以上，方块电阻约5Ω/sq。插入LiF 和Al 的AZO/LiF/Ag/LiF/AZO和AZO/Al/Ag/Al/AZO导电薄膜在723 K退火后方块电阻分别为5.7Ω/sq和7.6Ω/sq，而AZO/Ag/AZO薄膜电阻快速上升到27Ω/sq。这表明五层结构的透明导电薄膜相比三层结构的导电薄膜明显的提高了热稳定性。可能原因是插入的 LiF或Al层能抑制Ag原子的扩散和团聚。
    채용자공천사방법제비료 ZnO/Ag/ZnO、AZO/Ag/AZO 삼층화 AZO/LiF/Ag/LiF/AZO、AZO/Al/Ag/Al/AZO 오층투명도전박막，해체계박막450~700 nm 적평균투과솔재80%이상，방괴전조약5Ω/sq。삽입LiF 화Al 적AZO/LiF/Ag/LiF/AZO화AZO/Al/Ag/Al/AZO도전박막재723 K퇴화후방괴전조분별위5.7Ω/sq화7.6Ω/sq，이AZO/Ag/AZO박막전조쾌속상승도27Ω/sq。저표명오층결구적투명도전박막상비삼층결구적도전박막명현적제고료열은정성。가능원인시삽입적 LiF혹Al층능억제Ag원자적확산화단취。
    The multilayer transparent conducting films of ZnO/Ag/ZnO, AZO/Ag/AZO and AZO/LiF/Ag/LiF/AZO, AZO/Al/Ag/Al/AZO were fabricated by magnetron sputtering, respectively. These conducting films have sheet resistance as low as 5 Ω/sq and average optical transmittance of more than 80% at 450~700 nm. The sheet resistance of AZO/LiF/Ag/LiF/AZO and AZO/Al/Ag/Al/AZO reached respectively 5.7 Ω/sq and 7.6 Ω/sq after annealing at 723 K for 10min. However, the sheet resistance of AZO/Ag/AZO quickly reached 27 Ω/sq under the same annealing condition. Compared with three-layer films, five-layer films show better thermal stability because of limitation function of LiF and Al interlayer on Ag aggregation and diffusion.
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