CAJ | 학술논문

对蒸发源位于非平面基底-半球面正下方时膜厚均匀性进行了理论研究。通过建立无量纲模型计算了此种几何配置下，半球表面在两种常见理想蒸发源下各位置的膜厚公式以及膜厚分布方程。选择基底与蒸发源间较大的距离，可获得更大的可镀膜区域，同时该距离对基底上镀制的膜层厚度分布影响也较大。最后对实用蒸发源的发射系数，对该几何配置下半球面膜厚分布影响进行了理论研究。
대증발원위우비평면기저-반구면정하방시막후균균성진행료이론연구。통과건립무량강모형계산료차충궤하배치하，반구표면재량충상견이상증발원하각위치적막후공식이급막후분포방정。선택기저여증발원간교대적거리，가획득경대적가도막구역，동시해거리대기저상도제적막층후도분포영향야교대。최후대실용증발원적발사계수，대해궤하배치하반구면막후분포영향진행료이론연구。
The theory research of the film thickness distribution deposited on hemispherical surface with the evaporation source directly below the substrate is reported.The formulas of film thickness on any position of the hemispherical surface were derived in the geometric disposition.The uniformity of film thickness on the hemispherical surface were analyzed by cal-culate the relative film thickness .As the distance from the substrate to the evaporation source increase , the coating zone with larger range can be obtained, and the thickness functions turn to analogouslinear functionfrom the exponential function.Final-ly, a simulation research on the influence of emission pattern of real vapor sourceswas conducted .