CAJ | 학술논문

利用多靶磁控溅射系统在康宁玻璃基片上制备了Ta(4nm)/NiO(t)/Ni81Fe19(20nm)/NiO(t)/Ta(3nm)系列坡莫合金薄膜样品，研究了NiO插层厚度、基片温度对其各向异性磁电阻和微结构的影响。利用四探针技术测量薄膜样品的各向异性磁电阻比(AMR)，利用X射线衍射仪（XRD）分析样品的相结构，用原子力显微镜（AFM）分析样品的表面形貌。结果表明，由于NiO插层的“镜面反射”作用，选择适当厚度的NiO插层能够大幅度提高坡莫合金薄膜各向异性磁电阻比和磁场灵敏度。对于厚度为20nm的Ni81Fe19薄膜，当基片温度为450℃时，通过插入4nm厚的NiO插层可使AMR值达到5.01%，比无NiO插层时提高了40%。
이용다파자공천사계통재강저파리기편상제비료Ta(4nm)/NiO(t)/Ni81Fe19(20nm)/NiO(t)/Ta(3nm)계렬파막합금박막양품，연구료NiO삽층후도、기편온도대기각향이성자전조화미결구적영향。이용사탐침기술측량박막양품적각향이성자전조비(AMR)，이용X사선연사의（XRD）분석양품적상결구，용원자력현미경（AFM）분석양품적표면형모。결과표명，유우NiO삽층적“경면반사”작용，선택괄당후도적NiO삽층능구대폭도제고파막합금박막각향이성자전조비화자장령민도。대우후도위20nm적Ni81Fe19박막，당기편온도위450℃시，통과삽입4nm후적NiO삽층가사AMR치체도5.01%，비무NiO삽층시제고료40%。
A series of Ta(4nm)/NiO(t)/Ni81Fe19(20nm)/NiO(t)/Ta(3nm) ultrathin films were prepared using direct current magnetron sputtering system under appropriate conditions. Influence of NiO layer and substrate temperature on AMR of the samples are investigated. AMR value of Ni81Fe19 films are measured by four-point probe technology, the phase composition was characterized by X-ray diffraction, and surface topography of Ni81Fe19 films was observed by AFM. The experiment result shows that NiO layer with appropriate thickness could increase AMR greatly and its magnetic sensitivity of NiFe films due to the specular reflection of NiO layer. When sputtered at 450℃, the 20nm-thickness permalloy films with 4nm-thickness NiO laye has AMR value of 5.01%, increasing by 40%than that of film without NiO layer.