CAJ | 학술논문

本文基于为ITO/2-TNATA(20 nm)/NPB(30 nm)/BePP2：DCJTB(45 nm： X %)/Alq3(30 nm)/LiF(1 nm)/Al(100 nm)的白光器件结构(X为DCJTB的掺杂浓度(质量分数))。采用真空热蒸镀的方法，在高精度膜厚测控仪的监控下分别制备了发光层掺杂浓度为1，1.5，2.0，2.5，3.0不同器件，并对各器件性能进行了测试。实验结果表明：当DCJTB的掺杂浓度为2.0%时，平衡了器件中电子和空穴的传输能力，使载流子复合形成激子的几率增加，既使载流子的传输能力明显改善，并且有效地抑制了器件的荧光猝灭效应。在12 V电压下，可以获得发光亮度最高达到9868 cd/m2，发光效率大于7.2 cd/A，且色坐标为(0.334，0.337)的较理想白光有机发光器件。
본문기우위ITO/2-TNATA(20 nm)/NPB(30 nm)/BePP2：DCJTB(45 nm： X %)/Alq3(30 nm)/LiF(1 nm)/Al(100 nm)적백광기건결구(X위DCJTB적참잡농도(질량분수))。채용진공열증도적방법，재고정도막후측공의적감공하분별제비료발광층참잡농도위1，1.5，2.0，2.5，3.0불동기건，병대각기건성능진행료측시。실험결과표명：당DCJTB적참잡농도위2.0%시，평형료기건중전자화공혈적전수능력，사재류자복합형성격자적궤솔증가，기사재류자적전수능력명현개선，병차유효지억제료기건적형광졸멸효응。재12 V전압하，가이획득발광량도최고체도9868 cd/m2，발광효솔대우7.2 cd/A，차색좌표위(0.334，0.337)적교이상백광유궤발광기건。
Based on the white device structure of ITO/2-TNATA(20 nm)/NPB(30 nm)/BePP2:DCJTB(45 nm:X %)/Alq3(30 nm)/LiF(1 nm)/Al(100 nm), where X was the doping concentration of DCJTB, we fabricated different devices and studied their performance whose doping concentration (X) were 1, 1.5, 2.0, 2.5, 3.0 respectively, with high accuracy film thickness control instrument monitoring and vacuum thermal evaporation method. The results show that, when DCJTB doping concentration was 2.0 %, balance of transmission capacity of electron and hole in the device was achieved. The probability of forming excitons by carrier recombination was increased, which made both the transmission capacity of carriers increased and the fluorescence quencher effect of the device restrained effectively. At 12 V, the white organic light-emitting brightness was up to 9 868 cd/m2, luminous efficiency was more than 7.2 cd/A, and CIE coordinates reached (0.334, 0.337) which was close to the ideal white light.