CAJ | 학술논문

采用双层胶工艺电子束光刻在GaAs衬底上制备40 nm栅长T型栅。制备过程仅需1次曝光1次显影,使得工艺制备过程得到简化;优化的栅制作工艺保证了形貌良好的栅线条。实验结果表明,该方法能制备40 nm栅长的T型栅,基本满足器件制作要求。
채용쌍층효공예전자속광각재GaAs츤저상제비40 nm책장T형책。제비과정부수1차폭광1차현영,사득공예제비과정득도간화;우화적책제작공예보증료형모량호적책선조。실험결과표명,해방법능제비40 nm책장적T형책,기본만족기건제작요구。
New advances in e-beam lithography have made possible the fabrication of HEMT with gate length well in the nanometer regime. Double layers resist technology with electron beam lithography on a GaAs substrate is used to prepare 40nm gate length T-gate . This method requires only one lithogra- phy and one development, which can be applied to simplify the process and get a narrower gate. The ratio of head to footprint of the T gate is controllable. The experiment results show that the way meets the need of the device fabrication.