中国光学
中國光學
중국광학
CHINESE JOURNAL OF OPTICS
2013年
5期
710-717
,共8页
余华梁%陈曦矅%狄俊安
餘華樑%陳晞矅%狄俊安
여화량%진희요%적준안
自旋密度光栅%GaAs量子阱%电子自旋双极扩散%飞秒激光
自鏇密度光柵%GaAs量子阱%電子自鏇雙極擴散%飛秒激光
자선밀도광책%GaAs양자정%전자자선쌍겁확산%비초격광
spin concentration grating%GaAs quantum well%electron spin ambipolar diffusion%fs laser
为研究空穴对自旋极化电子扩散的影响，提出用自旋密度光栅方法来观察电子自旋扩散过程。由飞秒激光在本征GaAs多量子阱中激发产生瞬态自旋光栅和瞬态自旋密度光栅，并用于研究电子自旋扩散和电子自旋双极扩散。实验测得自旋双极扩散系数Das ＝25.4 cm 2/s，低于自旋扩散系数Ds ＝113.0 cm 2/s，表明自旋密度光栅中电子自旋扩散受到空穴的显著影响。
為研究空穴對自鏇極化電子擴散的影響，提齣用自鏇密度光柵方法來觀察電子自鏇擴散過程。由飛秒激光在本徵GaAs多量子阱中激髮產生瞬態自鏇光柵和瞬態自鏇密度光柵，併用于研究電子自鏇擴散和電子自鏇雙極擴散。實驗測得自鏇雙極擴散繫數Das ＝25.4 cm 2/s，低于自鏇擴散繫數Ds ＝113.0 cm 2/s，錶明自鏇密度光柵中電子自鏇擴散受到空穴的顯著影響。
위연구공혈대자선겁화전자확산적영향，제출용자선밀도광책방법래관찰전자자선확산과정。유비초격광재본정GaAs다양자정중격발산생순태자선광책화순태자선밀도광책，병용우연구전자자선확산화전자자선쌍겁확산。실험측득자선쌍겁확산계수Das ＝25.4 cm 2/s，저우자선확산계수Ds ＝113.0 cm 2/s，표명자선밀도광책중전자자선확산수도공혈적현저영향。
In order to research the effect of holes on the spin electron diffusion , a method of resonant spin am-plication called“Spin Concentration Grating(SCG)” is adopt to observe the process of electron spin diffusion . Transient spin grating and spin concentration grating excited by femtosecond laser beams are used to investigate electron spin diffusion and “electron spin ambipolar diffusion” in intrinsic GaAs multiple quantum wells .The measured coefficient of “electron spin ambipolar diffusion” Das =25.4 cm 2? s-1 is lower than that of electron spin diffusion Ds=113.0 cm 2? s-1 , which indicates that the influence of holes on electron spin diffusion in spin concentration grating is notable .
