CAJ | 학술논문

通过对于 GaAs 表面形貌在特定 As BEP (1．33μPa)、不同温度(570,560,550,540和530℃)下相变过程研究,发现随着温度的降低 GaAs 预粗糙化过程发生了不同程度的迟滞,在温度降至530℃附近时,延迟现象尤其明显,并且当温度远低于530℃时(As BEP 1．33μPa)GaAs 表面将不会发生预粗糙转变.采用二维艾辛模型建立方程结合实验数据对这一现象进行理论解释,理论计算出 GaAs 预粗糙化相变的临界转变温度为529℃,与实验中获得的数据吻合.采用理论上获得的临界转变温度,利用临界减慢理论对实验现象进行了合理的理论解释,认为在特定条件下GaAs 表面系统存在预粗糙化临界转变温度,当衬底温度接近这一温度时,临界减慢现象将会发生；当温度低于临界转变温度时,无论延长多少时间表面形貌相变过程将不会发生.
통과대우 GaAs 표면형모재특정 As BEP (1．33μPa)、불동온도(570,560,550,540화530℃)하상변과정연구,발현수착온도적강저 GaAs 예조조화과정발생료불동정도적지체,재온도강지530℃부근시,연지현상우기명현,병차당온도원저우530℃시(As BEP 1．33μPa)GaAs 표면장불회발생예조조전변.채용이유애신모형건립방정결합실험수거대저일현상진행이론해석,이론계산출 GaAs 예조조화상변적림계전변온도위529℃,여실험중획득적수거문합.채용이론상획득적림계전변온도,이용림계감만이론대실험현상진행료합리적이론해석,인위재특정조건하GaAs 표면계통존재예조조화림계전변온도,당츤저온도접근저일온도시,림계감만현상장회발생；당온도저우림계전변온도시,무론연장다소시간표면형모상변과정장불회발생.
Pre-roughness process of GaAs surface was studied using reflection high energy electron diffraction and scanning tunneling microscopy.We found that there was distinct difference in surface morphology at different temperature (570,560,550,540,530 ℃)under a special As BEP (1.33μPa).With the temperature decreasing, an obvious delay was discovered in pre-roughness process of GaAs surface,and this process should not onset when the temperature below 530 ℃.The critical slowing down theory was introduced to explain experimental phenomena and calculated the critical temperature of GaAs (001)roughening through the experiment data and the related theoretical model,and this theoretical result (529 ℃)was kept with experiment consequence (530 ℃).