CAJ | 학술논문

为了研究低压环境对激光剥离的影响，利用准分子激光剥离系统和真空腔对GaN/蓝宝石样品分别在低压下和常压下进行多脉冲激光照射，之后用台阶仪测量样品的分解深度，得知相比常压环境，低压下GaN分解深度在脉冲次数为10次、20次、30次时分别增加了为10.2%，19.0%，24.3%，之后结合GaN材料分解过程和脉冲激光照射GaN/蓝宝石结构过程进行理论分析得到相应低压和常压下的GaN材料的理论分解深度，得到与实验一致的趋势。证明了低压环境能提高激光剥离速率。
위료연구저압배경대격광박리적영향，이용준분자격광박리계통화진공강대GaN/람보석양품분별재저압하화상압하진행다맥충격광조사，지후용태계의측량양품적분해심도，득지상비상압배경，저압하GaN분해심도재맥충차수위10차、20차、30차시분별증가료위10.2%，19.0%，24.3%，지후결합GaN재료분해과정화맥충격광조사GaN/람보석결구과정진행이론분석득도상응저압화상압하적GaN재료적이론분해심도，득도여실험일치적추세。증명료저압배경능제고격광박리속솔。
In order to study the effects of low-pressure environment on laser lift-off process,the experiment that a GaN/sap-phire sample was irradiated by an excimer laser lift-off system in different pressure was carried out,and then the decomposition depth of the sample was measured with a profilometer. The results show that the decomposition depth of GaN in low pressure is increased by 10.2%,19.0% and 24.3% which corresponds to the number of pulses of 10,20 and 30. One-dimensional heat flow model of GaN/sapphire structure irradiated by laser was established. The temperature field in GaN was calculated and analyzed. The decomposition depth of GaN in different pressure was obtained. The theoretical calculation result is consistent with the ex-perimental result. It indicates that the efficiency of laser lift-off in low pressure environment is higher than that in ordinary pres-sureenvironment.