现代电子技术
現代電子技術
현대전자기술
MODERN ELECTRONICS TECHNIQUE
2014年
12期
134-136,139
,共4页
黄东巍%任翔%贾昊%刘砚君
黃東巍%任翔%賈昊%劉硯君
황동외%임상%가호%류연군
运算放大器%管脚短接%剂量率%电离总剂量效应
運算放大器%管腳短接%劑量率%電離總劑量效應
운산방대기%관각단접%제량솔%전리총제량효응
operational amplifier%each-pin-short-joint%dose rate%total ionizing dose effect
对某型号国产双极型双路高压运算放大器在不同偏置条件和不同剂量率条件下的电离总剂量效应进行了研究。通过对运算放大器辐照前后的电参数进行测试,计算得到增强因子,分析特殊偏置条件和低剂量率条件对运算放大器电离总剂量效应的影响。试验结果表明,偏置条件不同,运算放大器的电离总剂量效应表现出明显差异性,各管脚短接相对于正常加电工作条件是较恶劣的一种偏置条件。在0.01 rad(si)/s低剂量率条件下,运算放大器表现出潜在的低剂量率增强效应。
對某型號國產雙極型雙路高壓運算放大器在不同偏置條件和不同劑量率條件下的電離總劑量效應進行瞭研究。通過對運算放大器輻照前後的電參數進行測試,計算得到增彊因子,分析特殊偏置條件和低劑量率條件對運算放大器電離總劑量效應的影響。試驗結果錶明,偏置條件不同,運算放大器的電離總劑量效應錶現齣明顯差異性,各管腳短接相對于正常加電工作條件是較噁劣的一種偏置條件。在0.01 rad(si)/s低劑量率條件下,運算放大器錶現齣潛在的低劑量率增彊效應。
대모형호국산쌍겁형쌍로고압운산방대기재불동편치조건화불동제량솔조건하적전리총제량효응진행료연구。통과대운산방대기복조전후적전삼수진행측시,계산득도증강인자,분석특수편치조건화저제량솔조건대운산방대기전리총제량효응적영향。시험결과표명,편치조건불동,운산방대기적전리총제량효응표현출명현차이성,각관각단접상대우정상가전공작조건시교악렬적일충편치조건。재0.01 rad(si)/s저제량솔조건하,운산방대기표현출잠재적저제량솔증강효응。
Total ionizing dose effects on certain type of domestic bipolar dual-way high-voltage operational amplifier under the conditions of different bias and different dose rate is studied. The enhancement factor is obtained by testing the electrical pa-rameters before and after irradiation of operational amplifier. The impact of special bias and low dose rate on total ionizing dose effect of operational amplifier is analysed. The test results show that,under different bias conditions,the total ionizing dose ef-fect of operational amplifier reveals significant difference,Each-pin-short-joint is a more severe bias condition compared with the normal power working conditions. Under the low dose rate condition of 0.01 rad(si)/s,operational amplifiers exhibit a potential enhancement effect of low dose rate.