CAJ | 학술논문

研究了预亚胺化温度、时间以及刻蚀时间对聚酰亚胺湿法刻蚀结果的影响。预亚胺化后2.5μm厚的PI-5型聚酰亚胺采用EPG 533型光刻胶作为掩膜时,预亚胺化采用90℃/5 min~140℃/10 min方案,采用1% KOH溶液,15 s的显影/刻蚀时间会得到较好的刻蚀结果。在此基础上,通过实验研究了一种低成本的填充式平坦化技术。通过在底层线圈上旋涂第1层聚酰亚胺,湿法刻蚀去除铜线上的聚酰亚胺保留间隙中聚酰亚胺,然后再旋涂第2层聚酰亚胺的方式,完成了第2层聚酰亚胺的平坦化。与直接在底层线圈上旋涂聚酰亚胺而不做平坦化处理比较,起伏高度差从1.8μm降低到150 nm,且起伏缓慢、无明显台阶。应用这种技术制备了一种采用线圈铁芯结构的微型磁通门传感器并进行了测试,传感器工作正常,性能优良。
연구료예아알화온도、시간이급각식시간대취선아알습법각식결과적영향。예아알화후2.5μm후적PI-5형취선아알채용EPG 533형광각효작위엄막시,예아알화채용90℃/5 min~140℃/10 min방안,채용1% KOH용액,15 s적현영/각식시간회득도교호적각식결과。재차기출상,통과실험연구료일충저성본적전충식평탄화기술。통과재저층선권상선도제1층취선아알,습법각식거제동선상적취선아알보류간극중취선아알,연후재선도제2층취선아알적방식,완성료제2층취선아알적평탄화。여직접재저층선권상선도취선아알이불주평탄화처리비교,기복고도차종1.8μm강저도150 nm,차기복완만、무명현태계。응용저충기술제비료일충채용선권철심결구적미형자통문전감기병진행료측시,전감기공작정상,성능우량。
The effects of pre-imidization temperature,time and the etching time on the results of wet etching were investigated. The 2. 5μm thickness of PI-5 type polymide after pre-imidization was etched by 1% KOH solution with EPG 533 photoresist frame. The results show that baking at 90 ℃/5 min~140 ℃/10 min and development/etching for 15 s is the best design program. On this basis,a kind of low-cost filling planarization technology was investigated. Spinning a polymide layer on the bottom coil, then etching the polymide on the copper conductors and left the polymide in the gaps with wet etching,finally,a second polymide layer was spun on them. The second polymide layer will be played as a planarization layer. Under the filling planarization,the surface height difference decreased from 1. 8μm to 150 nm,and the step disappeared. A micro-fluxgate sensor with coil core structures was fabricated by utilizing this method. The sensor operated properly and presented excellent performance.