CAJ | 학술논문

为提高硅片抛光质量与效率，利用均相沉淀法制备CeO2/SiO2复合磨粒，配制绿色环保水基型抛光液对硅片进行化学机械抛光，研究pH值、抛光时间、抛光速度、抛光压力等抛光工艺参数对硅片抛光性能的影响。结果表明：随抛光液pH值增加，材料去除率相应增大；材料去除率在一定时间范围内随抛光时间增加而下降；材料去除量随抛光速度、抛光压力的增加均先增大后减小。推测CeO2/SiO2复合磨粒抛光机制为由于水合作用，在硅片表面形成一层易于磨削的软质层。
위제고규편포광질량여효솔，이용균상침정법제비CeO2/SiO2복합마립，배제록색배보수기형포광액대규편진행화학궤계포광，연구pH치、포광시간、포광속도、포광압력등포광공예삼수대규편포광성능적영향。결과표명：수포광액pH치증가，재료거제솔상응증대；재료거제솔재일정시간범위내수포광시간증가이하강；재료거제량수포광속도、포광압력적증가균선증대후감소。추측CeO2/SiO2복합마립포광궤제위유우수합작용，재규편표면형성일층역우마삭적연질층。
In order to improve the quality and efficiency of wafer chemical mechanical polishing(CMP),the green wa-ter-based slurry was prepared by CeO2/SiO2 composite abrasives with homogeneous precipitation,and the polishing per-formance of CeO2/SiO2 composite abrasive slurry on silicon wafer was studied by changing pH value of polishing slurry, polishing time,polishing speed and polishing pressure.The results show that the material removal rate is increased with the increasing of pH value of polishing slurry,and decreased with time within a certain polishing time.With the increasing of polishing rate and polishing pressure,the amount of material removal is increased first and then decreased.The polishing mechanism of CeO2/SiO2 composite abrasive slurry is that the soft layer easy for grinding is formed on wafer surface by CeO2/SiO2 composite abrasives due to the hydration.